Investigation of the physical modeling of the...

IEEE Transactions on Electron Devices 1992 Vol. 39; Iss. 6

Investigation of the physical modeling of the gate-depletion effect

Habas, P., Faricelli, J.V.
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Volume:
39
Year:
1992
Language:
english
Pages:
5
DOI:
10.1109/16.137331
File:
PDF, 537 KB
english, 1992
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