Volume 39; Issue 6

IEEE Transactions on Electron Devices

Volume 39; Issue 6

1

Multiplicity of discharge channels for a flat fluorescent lamp to backlight a full color LCD

Anandan, M., Ketchum, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 336 KB

english, 1992

2

Optimized trench MOSFET technologies for power devices

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 978 KB

english, 1992

3

A model for electroluminescence in SrS:Ce ACTFEL display devices

Singh, V.P., Morton, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 921 KB

english, 1992

4

Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors

Hu, J., Pavlidis, D., Tomizawa, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1009 KB

english, 1992

5

Noise characterization of an AlGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD)

Parker, J.S., Bosman, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 546 KB

english, 1992

6

Mobility of strained and dislocated InxGa1-xAs semiconductor material

Kuhn, K.J., Darling, R.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 742 KB

english, 1992

7

Use of the three-dimensional TLM method in the thermal simulation and design of semiconductor devices

Gui, X., Webb, P.W., Gao, G.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 734 KB

english, 1992

8

A new charge-control model for single- and double-heterojunction bipolar transistors

Parikh, C.D., Lindholm, F.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 875 KB

english, 1992

9

Approximations for carrier density in nonparabolic semiconductors

Ariel-Altschul, V., Finkman, E., Bahir, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 538 KB

english, 1992

10

A self-aligned short process for insulated-gate bipolar transistors

Chow, T.P., Baliga, B.J., Gray, P.V., Adler, M.S., Chang, M.F., Pifer, G.C., Yilmaz, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 562 KB

english, 1992

11

High-reliability interconnections for ULSI using Al-Si-Pd-Nd/Mo layered films

Onuki, J., Koubuchi, Y., Suwa, M., Koizumi, M., Gardner, D.S., Suzuki, H., Minowa, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 682 KB

english, 1992

12

Design of bipolar imaging devices (BASIS): analysis of random noise

Nakamura, Y., Ohzu, H., Miyawaki, M., Ishizaki, A., Kochi, T., Ohmi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 841 KB

english, 1992

13

A metal-amorphous silicon-germanium alloy Schottky barrier for infrared optoelectronic IC on glass substrate application

Fang, Y.K., Hwang, S.-B., Chen, K.-H., Liu, C.-R., Kuo, L.-C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 553 KB

english, 1992

14

Theoretical analysis of the influences of barrier-enhancement layers on transient responses of MSM photodetectors

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 599 KB

english, 1992

15

Electrical and optical characteristics of vacuum-sealed polysilicon microlamps

Mastrangelo, C.H., Yeh, J.H.-J., Muller, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.32 MB

english, 1992

16

An integrated mass flow sensor with on-chip CMOS interface circuitry

Yoon, E., Wise, K.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.22 MB

english, 1992

17

Advanced process device technology for 0.3-μm high-performance bipolar LSIs

Tamaki, Y., Shiba, T., Kure, T., Ohyu, K., Nakamura, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 521 KB

english, 1992

18

Analysis and minimization of small-geometry effects on the current gain of self-aligned `etched-polysilicon' emitter bipolar transistors

Nouailhat, A., Giroult-Matlakowski, G., Marty, A., Degors, N., Bruni, M.-D., Chantre, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 668 KB

english, 1992

19

On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.06 MB

english, 1992

20

EEPROM as an analog storage device, with particular applications in neutral networks

Sin, C.-K., Kramer, A., Hu, V., Chu, R.R., Ko, P.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 777 KB

english, 1992

21

Quantitative correlations between the performance of polysilicon emitter transistors and the evolution of polysilicon/silicon interfacial oxides upon annealing

Ajuria, S.A., Gan, C.H., Noel, J.A., Reif, L.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 924 KB

english, 1992

22

Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE

Khakzar, K., Lueder, E.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 494 KB

english, 1992

23

A functional MOS transistor featuring gate-level weighted sum and threshold operations

Shibata, T., Ohmi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.21 MB

english, 1992

24

Accurate delay models for digital BiCMOS

Raje, P.A., Saraswat, K.C., Cham, K.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 860 KB

english, 1992

25

Analysis of low signal level characteristics for high-sensitivity CCD charge detector

Ohsawa, S., Matsunaga, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 408 KB

english, 1992

26

Gain-enhanced LDD NMOS device using cesium implantation

Pfiester, J.R., Alvis, J.R., Gunderson, C.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 776 KB

english, 1992

27

Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

Burghartz, J.N., Sun, J.Y.-C., Stanis, C.L., Mader, S.R., Warnock, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.69 MB

english, 1992

28

Unilateral power gain resonances and roll-off with frequency for the velocity-saturated MOSFET/MODFET wave equation

Roblin, P., Kang, S.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 581 KB

english, 1992

29

Investigation of the physical modeling of the gate-depletion effect

Habas, P., Faricelli, J.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 537 KB

english, 1992

30

Location of low-frequency noise sources in submicrometer bipolar transistors

Kleinpenning, T.G.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 533 KB

english, 1992

31

Performance limitations of a GTO with near-perfect technology

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 728 KB

english, 1992

32

Multistep field plates for high-voltage planar p-n junctions

Feiler, W., Falck, E., Gerlach, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 606 KB

english, 1992

33

A 200-A/2000-V MOS-GTO with improved cell design

Stoisiek, M., Oppermann, K.G., Stengl, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 837 KB

english, 1992

34

Guiding center fluid model of the crossed-field amplifier

Riyopoulos, S.A., Chernin, D.P., Drobot, A.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.26 MB

english, 1992