A novel MONOS nonvolatile memory device ensuring 10-year...

A novel MONOS nonvolatile memory device ensuring 10-year data retention after 107 erase/write cycles

Minami, S.-i., Kamigaki, Y.
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Volume:
40
Year:
1993
Language:
english
Pages:
7
DOI:
10.1109/16.239742
File:
PDF, 749 KB
english, 1993
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