Volume 40; Issue 11

IEEE Transactions on Electron Devices

Volume 40; Issue 11

1

A low-frequency noise study of gate-all-around SOI transistors

Simoen, E., Magnusson, U., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

2

RF properties of epitaxial lift-off HEMT devices

Young, P.G., Alterovitz, S.A., Mena, R.A., Smith, E.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 529 KB

english, 1993

3

A novel analog-to-digital conversion architecture using electron waveguides

Eugster, C.C., Nuytkens, P.R., del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 653 KB

english, 1993

4

Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities

Liu, W., Nelson, S., Hill, D.G., Khatibzadeh, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 1.06 MB

english, 1993

5

Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells

Jain, R.K., Flood, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 697 KB

english, 1993

6

Characterization of GaAs and InGaAs double-quantum well heterostructure FETs

Theron, D., Bonte, B., Gaquiere, C., Playez, E., Crosnier, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 657 KB

english, 1993

7

Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transport

Laskar, J., Nottenburg, R.N., Baquedano, J.A., Levi, A.F.J., Kolodzey, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 748 KB

english, 1993

8

Monte Carlo analysis of nonequilibrium electron transport in InAlGaAs/InGaAs HBT's

Nakajima, H., Ishibashi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 692 KB

english, 1993

9

Long wavelength infrared 128×128 AlxGa1-x As/GaAs quantum well infrared camera and imaging system

Bethea, G.C., Levine, B.F., Asom, M.T., Leibenguth, R.E., Stayt, J.W., Glogovsky, K.G., Morgan, R.A., Blackwell, J.D., Parrish, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 626 KB

english, 1993

10

Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques

Furuta, M., Kawamura, T., Yoshioka, T., Miyata, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 624 KB

english, 1993

11

Temporal response characteristics of a In0.53Ga0.47 As/InP quantum well phototransistor

Goswami, S., Bhattacharya, P., Cowles, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 731 KB

english, 1993

12

An experimental technique and a model for studying the operation of harmonic side-drive micrometers

Dhuler, V.R., Mehregany, M., Phillips, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 806 KB

english, 1993

13

A comparative study of bearing designs and operational environments for harmonic side-drive micromotors

Dhuler, V.R., Mehregany, M., Phillips, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 550 KB

english, 1993

14

Drift hole mobility in strained and unstrained doped Si1-x Gex alloys

Manku, T., McGregor, J.M., Nathan, A., Roulston, D.J., Noel, J.-P., Houghton, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 711 KB

english, 1993

15

Mobility study on RIE etched silicon surfaces using SF6/O2 gas etchants

Syau, T., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 804 KB

english, 1993

16

Estimation of insulation layer conductance in MNOS structure

Takahashi, Y., Ohnishi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 417 KB

english, 1993

17

A novel MONOS nonvolatile memory device ensuring 10-year data retention after 107 erase/write cycles

Minami, S.-i., Kamigaki, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 749 KB

english, 1993

18

Oxide-field dependence of electron injection from silicon into silicon dioxide

Fiegna, C., Sangiorgi, E., Selmi, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 542 KB

english, 1993

19

A discussion on the temperature dependence of latch-up trigger current in CMOS/BiCMOS structures

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 547 KB

english, 1993

20

A floating-gate analog memory device for neural networks

Fujita, O., Amemiya, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

21

A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

Schroter, M., Friedrich, M., Rein, H.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 1.10 MB

english, 1993

22

Novel interface nitridation process for thin gate oxides

Rahat, I., Shappir, J., Ben-Atar, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 564 KB

english, 1993

23

Hooge fluctuation parameter of semiconductor microstructures

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 465 KB

english, 1993

24

A new technique for depth resolved carrier recombination measurements applied to proton irradiated thyristors

Linnros, J., Norlin, P., Hallen, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 941 KB

english, 1993

25

An intelligent power IC with double buried-oxide layers formed by SIMOX technology

Ohno, T., Matsumoto, S., Izumi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 600 KB

english, 1993

26

Influence of the series resistance of on-chip power supply buses on internal device failure after ESD stress [MOS devices]

Terletzki, H., Nikutta, W., Reczek, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 322 KB

english, 1993

27

Improved junction capacitance model for the GaAs MESFET

Rodriguez-Tellez, J., Mezher, K., Al-Daas, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 306 KB

english, 1993

28

Note on charge conservation in the transient semiconductor equations

Pfirsch, F., Ruff, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 334 KB

english, 1993

29

Influence of majority carrier accumulation in the SIT with a high-purity channel on voltage amplification factor

Yano, K., Kim, C.-W., Kimura, M., Tanaka, A., Motoyama, S.-I., Sukegawa, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

30

Non-isothermal analysis of breakdown in SOI transistors

Apanovich, Y., Lyumkis, E., Polsky, B., Blakey, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

31

IEEE 51st Annual Device Research Conference

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 6.06 MB

english, 1993

32

Graceful growth of technology

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 125 KB

english, 1993

33

An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 125 KB

english, 1993

34

Microelectromechanics, nanomechanisms, and tips

MacDonald, N.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 260 KB

english, 1993

35

Self-aligned BJTs for VLSI using a new diffusion technique for shallow base formation

Johnson, F.S., Harris, G.S., Wortman, J.J., Ozturk, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

36

Base thickness and high-frequency performance of SiGe HBT's

Gruhle, A., Kibble, H., Erben, U., Kasper, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 140 KB

english, 1993

37

Visible (639 nm &les;λ&les;661 nm) vertical cavity surface emitting laser diodes

Lott, J.A., Schneider, R.P., Jr., Molly, K.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 263 KB

english, 1993

38

113-GHz fT graded-base SiGe HBT's

Crabbe, E., Meyerson, B., Harame, D., Stork, J., Megdanis, A., Cotte, J., Chu, J., Gilbert, M., Stanis, C., Comfort, J., Patton, G., Subbanna, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 268 KB

english, 1993

39

Temperature and scaling behavior of strained-Si N-MOSFET's

Welser, J., Hoyt, J.L., Gibbons, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 141 KB

english, 1993

40

First direct beta measurement for parasitic lateral bipolar transistors in fully-depleted SOI MOSFET's

Ver Ploeg, E., Nguyen, C., Kistler, N., Wong, S., Woo, J., Plummer, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

41

A new recessed gate MOSFET structure with the graded source/drain

Lee, W.-H., Park, Y.-J., Lee, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 272 KB

english, 1993

42

Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling

Frank, D.J., Laux, S.E., Fischetti, M.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 136 KB

english, 1993

43

A high speed and low power on CMOS/SOI technology

Lee, M., Fujishima, M., Asada, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 274 KB

english, 1993

44

Undoped SiGe heterostructure field effect transistors

Jackson, T.N., Nelson, S.F., Chu, J.O., Meyerson, B.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 276 KB

english, 1993

45

The self-consistent simulation of the modulation responses of quantum well lasers

Grupen, M., Hess, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 260 KB

english, 1993

46

Anomalous damping in MQW lasers due to slow inter-well transport

Hangleiter, A., Grabmaier, A., Fuchs, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 135 KB

english, 1993

47

A tunneling injection quantum well laser

Sun, H.C., Bhattacharya, P., Singh, J., Davis, L., Sethi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 260 KB

english, 1993

48

Curved and tapered waveguide mode-locked InGaAs/AlGaAs semiconductor lasers fabricated by impurity induced disordering

Helkey, R., Zou, W.-X., Mar, A., Young, D.B., Browers, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

49

A photonic integrated tunable receiver/optical preamplifier in a vertical coupler filter structure

Chuang, Z.-M., Mondry, M.J., Young, D.B., Cohen, D.A., Coldren, L.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 274 KB

english, 1993

50

Ultra-high efficiency light-emitting-diode arrays

Schnitzer, I., Yablonovitch, E., Ersen, A., Scherer, A., Caneau, C., Gmitter, T.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 276 KB

english, 1993

51

Blue-green buried-ridge laser diodes

Haase, M.A., Baude, P.F., Hagedorn, M.S., Qui, J., DePuydt, J.M., Cheng, H., Guha, S., Hofler, G.E., Wu, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 142 KB

english, 1993

52

Physics of breakdown in InAlAs/InGaAs MODFET's

Bahl, S.R., del Alamo, J.A., Dickmann, J., Schildberg, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

53

Pseudomorphic SCH blue-green diode lasers

Grillo, D.C., Fan, Y., Ringle, M.D., Han, J., He, L., Gunshor, R.L., Jeon, H., Salokatve, A., Hagerott, M., Nurmikko, A.V., Hua, G.C., Otsuka, N., Oh, E., Ramdas, A.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 140 KB

english, 1993

54

OMCVD grown AlInAs/GaInAs HEMTs with AlGaInP Schottky layer

Chough, K.B., Hong, W.-P., Caneau, C., Song, J.-I., Hayes, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 134 KB

english, 1993

55

Study of the dependence of Ga0.47In0.53As/Al x In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout

Brown, J.J., Brown, A.S., Rosenbaum, S.E., Schmitz, A.S., Matloubian, M., Larson, L.E., Melendes, M.A., Thompson, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 260 KB

english, 1993

56

GaInAs/InP composite channel HEMT's

Matloubian, M., Jelloian, L.M., Lui, M., Liu, T., Larson, L.E., Nguyen, L.D., Le, M.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 140 KB

english, 1993

57

Thermally stable AlGaAs/GaAs microwave power HBT's

Bayraktaroglu, B., Barrette, J., Fitch, R., Kehias, L., Huang, C.I., Neidhard, R., Scherer, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 264 KB

english, 1993

58

AlGaAs/GaAs Pnp HBT with 54 GHz fmax and application to high-performance complementary technology

Hill, D.G., Kim, T.S., Tserng, H.Q.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 266 KB

english, 1993

59

GaInP/GaAs HBT's for high-speed integrated circuit applications

Ho, W.J., Chang, M.F., Sailer, A., Zampardi, P., Deakin, D., McDermott, B., Pierson, R., Higgins, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 266 KB

english, 1993

60

Improved charge control and the frequency performance in InAs/AlSb HFET's

Bolognesi, C.R., Caine, E.J., Kroemer, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 143 KB

english, 1993

61

High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD

Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Misra, U.K., Liu, T.K., Brown, J.J., Liu, M.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 139 KB

english, 1993

62

High wallplug efficiency vertical-cavity top-surface emitting laser diodes

Lear, K.S., Chalmers, S.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

63

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

Wu, Y.A., Chang-Hasnain, C.J., Li, G.S., Nabiev, R., Caneau, C., Florez, L.T., Choquette, K.D., Hasnain, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 259 KB

english, 1993

64

Reflection noise in vertical-cavity surface-emitting lasers

Bae, J.W., Temkin, H., Swirhun, S.E., Quinn, W.E., Brusenbach, P., Parsons, C., Kim, M., Uchida, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 135 KB

english, 1993

65

Vertical-cavity laser diode polarization switching and control

Choquette, K.D., Lear, K.L., Leibenguth, R.E., Asom, M.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 264 KB

english, 1993

66

Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE

Chen, Y.K., Tanbun-Ek, T., Logan, R.A., Tate, A., Sergent, A.M., Wecht, K.W., Sciortino, P.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 270 KB

english, 1993

67

Continuous wave visible InGaP/InGaAlP quantum-well surface-emitting laser diodes

Huang, K.F., Tai, K., Wu, C.C., Wynn, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 139 KB

english, 1993

68

Low threshold, electrically injected InGaAsP (1.3 μm) vertical cavity lasers on GaAs substrates

Dudley, J.J., Babic, D.I., Mirin, R., Yang, L., Miller, B.I., Ram, R.J., Reynolds, T., Hu, E.L., Bowers, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

69

Vertical-cavity surface-emitting lasers with 14 GHz bandwidth

Brusenbach, P., Uchida, T.K., Parsons, C., Kim, M., Quinn, W.E., Swirhun, S.E., Shtengel, G., Temkin, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

70

High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE

Chau, H.-F., Beam, E.A., III

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 141 KB

english, 1993

71

Influence of launching energy on collector transport in InP/InGaAs double-heterojunction bipolar transistors

Kurishima, K., Kobayashi, T., Matsuoka, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 267 KB

english, 1993

72

Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transport

Laskar, J., Nottenburg, R.N., Levi, A.F.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 143 KB

english, 1993

73

Effects of collector doping on DC and RF performance of AlInAs/GaInAs/InP double heterojunction bipolar transistors

Hafizi, H., Liu, T., Rensch, D.B., Stanchina, W.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 271 KB

english, 1993

74

Base recombination of high performance InGaAs/InP HBT's

Seabury, C.W., Farley, C.W., McDermott, B.T., Higgins, J.A., Lin, C.L., Kirchner, P.J., Woodall, J.M., Gee, R.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 270 KB

english, 1993

75

High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions

Shimawaki, H., Amamiya, Y., Furuhata, N., Honjo, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 142 KB

english, 1993

76

AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO2 and polycrystalline GaAs in the extrinsic base and collector

Mochizuki, K., Nakamura, T., Tanoue, T., Masuda, H., Horiuchi, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 270 KB

english, 1993

77

Development of polysilicon TFTs for 16 MB SRAMs and beyond

Batra, S., Maddox, R., Tran, L., Manning, M., Dennison, C., Fazan, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 265 KB

english, 1993

78

A 0.5-μm EEPROM cell using poly-Si TFT technology

Sato, A., Momiyama, Y., Nara, Y., Sugii, T., Arimoto, Y., Ito, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 133 KB

english, 1993

79

A 3D sidewall flash EPROM cell and memory array

Pein, H., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 268 KB

english, 1993

80

Dislocation free gate process using in situ doped polysilicon thin films by crystallization-induced stress of the films

Hashimoto, C.M., Miura, H., Asayama, K., Ohta, H., Ikeda, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 277 KB

english, 1993

81

Numerical simulations of on and off state characteristics of polysilicon thin film transistors

Hack, M., Wu, I.-W., Lewis, A.G., King, T.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 145 KB

english, 1993

82

a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition

Wright, S.L., Rothwell, M.B., Souk, J.H., Kuo, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 271 KB

english, 1993

83

Excimer-laser crystallized poly-Si TFTs with mobility of more than 600 cm2/Vs

Choi, D.H., Sadayuki, E., Sugiura, O., Matsumura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 141 KB

english, 1993

84

Demonstrating the potential of 6-H silicon carbide for power devices

Palmour, J.W., Edmond, J.A., Carter, C.H., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

85

High voltage 6H-SiC rectifiers: prospects and progress

Neudeck, P.G., Larkin, D.J., Powell, J.A., Matus, L.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 143 KB

english, 1993

86

MOS characterization of thermally oxided 6H silicon carbide

Sanders, J.W., Pan, J., Xie, M., Sheppard, S.T., Mathur, M., Cooper, J.A., Jr., Melloch, M.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

87

Very low forward drop JBS rectifiers fabricated using submicron technology

Mehrota, M., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 276 KB

english, 1993

88

High voltage implanted RESURF p-LDMOS using BiCMOS technology

Zhou, M.-J., De Bruycker, A., Van Calster, A., Witters, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 144 KB

english, 1993

89

Ultralow on-resistance p-channel lateral DMOS fabricated on (110)-oriented Si substrate

Throngnumchai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

90

Experimental realization of the bound state resonant tunneling transistor

Chen, W.L., Haddad, G.I., Munns, G.O., East, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 273 KB

english, 1993

91

Room-temperature operation of InGaAs-based hot-electron transistors

Moise, T.S., Seabaugh, A.C., Beam, E.A., III., Kao, Y.-C., Randall, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 141 KB

english, 1993

92

Split-gate InGaAs quantum wire device operated at 80 K

Yoh, K., Nishida, A., Inoue, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

93

A novel quantum effect FET with resonantly modulated transfer characteristics

Ohno, Y., Tsuchiya, M., Sakaki, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 142 KB

english, 1993

94

A new quantum dot transistor

Wang, Y., Chou, S.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

95

Monte Carlo simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes

Chandramouli, V., Maziar, C.M., Campbell, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 148 KB

english, 1993

96

A micromachined polyimide aperture for stable bilayer lipid membranes (BLMs)

Eray, M., Dogan, N.S., Liu, L., Koch, A.R., Moffett, D.F., Silber, M., Van Wie, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 279 KB

english, 1993

97

MBE regrowth of LEDs on VLSI GaAS MESFETs

Shenoy, K.V., Fonstad, C.G., Jr., Grot, A.C., Psaltis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 268 KB

english, 1993

98

1D to 1D tunneling in a dual electron waveguide device

Eugster, C.C., del Alamo, J.A., Melloch, M.R., Rooks, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

99

Characterization and high-speed digital application of GaAs MESFETs on substrates

Onozawa, S., Yamamoto, N., Kimura, T., Sano, Y., Akiyama, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

100

Demonstration of monolithic co-fabrication of Y1Ba2 Cu3O7-δ and CMOS devices on the same sapphire substrate

de la Houssaye, P.R., Burns, M.J., Ruby, W.J., Russell, S.D., Clayaton, S.R., Garcia, G.A., Lee, L.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 271 KB

english, 1993

101

High temperature superconductor subharmonically pumped digital phase modulator/demodulator

Drabeck, L., Polakos, P., O'Malley, M., Schneider, M.V., Trambarulo, R., Mankiewich, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 271 KB

english, 1993

102

InAs bipolar transistors: a path to high-performance cryogenic electronics

Dodd, P.E., Melloch, M.R., Lundstrom, M.S., Woodall, J.M., Pettit, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

103

Normal incidence detector using Ge quantum-well structures grown on Si (100)

Lee, C., Chun, S.K., Wang, K.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 265 KB

english, 1993

104

Multicolor voltage tunable quantum-well infrared photodetector

Liu, H.C., Li, J., Thompson, J.R., Wasilewski, Z.R., Buchanan, M., Simmons, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 140 KB

english, 1993

105

Background limited infrared hot-electron transistor at 77 K

Kuan, C.H., Tsui, D.C., Choi, K.K., Chang, W.H., Chang, C., Farley, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 265 KB

english, 1993

106

Doping-spike LWIR PtSi Schottky IR detector fabricated by molecular beam epitaxy

Line, T.L., Park, J., George, T., Jones, E.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

107

Low voltage hetero-nipi wavelength modulators

Yoffe, G.W., Brubach, J., van der Vleuten, W.C., Karouta, F., Wolter, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 146 KB

english, 1993

108

Normal incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain

Pamulapati, J., Shen, H., Wraback, M., Taysing-Lara, M., Dutta, M., Luo, H.C., Lu, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 272 KB

english, 1993

109

Ultrafast single photon avalanche diodes without slow tails in the pulse response

Lacaita, A., Ghioni, M., Cova, S., Zappa, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 138 KB

english, 1993

110

110 GHz Si MSM photodetectors

Liu, M.Y., Chou, S.Y., Alexandrou, S., Wang, C.C., Hsiang, T.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

111

Asymmetric Fabry-Perot modulators with millimeter-wave (37 GHz) frequency response

Barron, C.C., Mohan, C.J., Thibeault, B.J., Wang, G., Karin, J.R., Coldren, L.A., Bowers, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 162 KB

english, 1993

112

Physical models for bipolar device simulation and their effects on cutoff frequency

Shigyo, N., Niitsu, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 325 KB

english, 1993

113

Simulation of proton-induced local lifetime reduction in 10 kV diodes

Brammer, R., Hallen, A., Hakansson, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 355 KB

english, 1993

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