Study of the dependence of Ga0.47In0.53As/Al x In1-xAs...

IEEE Transactions on Electron Devices 1993 Vol. 40; Iss. 11

Study of the dependence of Ga0.47In0.53As/Al x In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout

Brown, J.J., Brown, A.S., Rosenbaum, S.E., Schmitz, A.S., Matloubian, M., Larson, L.E., Melendes, M.A., Thompson, M.A.
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Volume:
40
Year:
1993
Language:
english
Pages:
2
DOI:
10.1109/16.239781
File:
PDF, 260 KB
english, 1993
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