A new analytical model for the GaAs MESFET in the...

IEEE Transactions on Electron Devices 1988 Vol. 35; Iss. 8

A new analytical model for the GaAs MESFET in the saturation region

Pouvil, P., Gautier, J.-L., Pasquet, D.
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Volume:
35
Year:
1988
Language:
english
Pages:
8
DOI:
10.1109/16.2540
File:
PDF, 442 KB
english, 1988
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