Volume 35; Issue 8

IEEE Transactions on Electron Devices

Volume 35; Issue 8

1

An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs

Weiss, M.R., Pavlidis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 877 KB

english, 1988

2

Nonlinear parasitics in MODFETs and MODFET I-V characteristics

Roblin, P., Rice, L., Bibyk, S.B., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 801 KB

english, 1988

3

A new analytical model for the GaAs MESFET in the saturation region

Pouvil, P., Gautier, J.-L., Pasquet, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 442 KB

english, 1988

4

An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

Cazaux, J.-L., Ng, G.-I., Pavlidis, D., Chau, H.-F.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 868 KB

english, 1988

5

Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs

Ramirez, J.-C., McNally, P.J., Cooper, L.S., Rosenberg, J.J., Freund, L.B., Jackson, T.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.01 MB

english, 1988

6

Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Byun, Y.H., Shur, M.S., Peczalski, A., Schuermeyer, F.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 496 KB

english, 1988

7

Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant

Yamaguchi, T., Yu, Y.-C.S., Lane, E.E., Lee, J.S., Patton, E.E., Herman, R.D., Ahrendt, D.R., Drobny, V.F., Yuzuriha, T.H., Garuts, V.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.09 MB

english, 1988

8

Half-VCC sheath-plate capacitor DRAM cell with self-aligned buried plate wiring

Kaga, T., Kawamoto, Y., Kure, T., Nakagome, Y., Aoki, M., Sunami, H., Makino, T., Ohki, N., Itoh, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 784 KB

english, 1988

9

A 200-V flat-panel display IC with a novel diffused-well structure

Hayama, H., Hirata, K., Sakuma, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 583 KB

english, 1988

10

Theoretical studies of electronic conduction and optical generation mechanisms in the double-heterostructure optoelectronic switch (DOES)

Simmonds, J.G., Taylor, G.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 801 KB

english, 1988

11

A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply

Matsuda, K., Kubo, M., Ohnaka, K., Shibata, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 488 KB

english, 1988

12

A theoretical study of transducer noise in piezoresistive and capacitive silicon pressure sensors

Spender, R.R., Fleischer, B.M., Barth, P.W., Angell, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.16 MB

english, 1988

13

Stress voltage polarity dependence of thermally grown thin gate oxide wearout

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 669 KB

english, 1988

14

A novel dual p-/p+ poly gate CMOS VLSI technology

Pfiester, J.R., Parrillo, L.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 590 KB

english, 1988

15

Optimization of silicon bipolar transistors for high current gain at low temperatures

Woo, J.C.S., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.01 MB

english, 1988

16

An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitter

Chen, T.-C., Chuang, C.T., Li, G.P., Basvaiah, S., Tang, D.D.-L., Ketchen, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 745 KB

english, 1988

17

Low-resistance submicrometer contacts to silicon

Wright, P.J., Loh, W.M., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 556 KB

english, 1988

18

Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

Potyraj, P.A., Chen, D.-L., Hatalis, M.K., Greve, D.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.26 MB

english, 1988

19

Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 780 KB

english, 1988

20

Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode

Luo, M.-Y., Bosman, G., Van Der Ziel, A., Hench, L.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 562 KB

english, 1988

21

Effect on the performance of staircase APDs of electron impact ionization within the graded-gap region

Fyath, R.S., O'Reilly, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 634 KB

english, 1988

22

Double-interdigitated power transistors

Silard, A.P., Nani, G., Floru, F., Stefan, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 669 KB

english, 1988

23

Tantalum nitride-p-silicon high-voltage Schottky diodes

Kapoor, A.K., Thomas, M.E., Ciacchella, J.F., Hartnett, M.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 578 KB

english, 1988

24

A power SIPOS MISS device

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 401 KB

english, 1988

25

MONO/POLY technology for fabricating low-capacitance CMOS integrated circuits

Ipri, A.C., Jastrzebski, L.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 189 KB

english, 1988

26

Determination of the doping profile near the metal-semiconductor interface of ZrN/GaAs contacts

Fourkas, R.M., Cheung, N.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 320 KB

english, 1988

27

The effect of drain bias upon frequency response in GaAs MESFETs

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 452 KB

english, 1988

28

DC performance of GaAs/AlxGa1-xAs p-n-p heterojunction bipolar transistors grown by OMVPE

De Lyon, T., Casey, H.C., Jr., Enquist, P.M., Hutchby, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 393 KB

english, 1988

29

Simplified analysis of body-contact effect for MOSFET/SOI

Omura, Y., Izumi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 323 KB

english, 1988

30

Simple measurement of the properties of a distributed resistor-capacitor line

Pimbley, J.M., Michon, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 329 KB

english, 1988

31

The effects of nonuniform oxide thickness on MOSFET performance

Zhang, Q.Z., Kozicki, M.N., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

32

Amorphous silicon/silicon carbide superlattice avalanche photodiodes

Jwo, S.-C., Wu, M.-T., Chen, J.-K., Hong, J.-W., Chang, C.-Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 526 KB

english, 1988

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