Surface mobility in n+ and p+ doped polysilicon gate PMOS...

IEEE Transactions on Electron Devices 1989 Vol. 36; Iss. 5

Surface mobility in n+ and p+ doped polysilicon gate PMOS transistors

Amm, D.T., Mingam, H., Delpech, P., D'Ouville, T.T.
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Volume:
36
Year:
1989
Language:
english
Pages:
6
DOI:
10.1109/16.299679
File:
PDF, 639 KB
english, 1989
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