Volume 36; Issue 5

IEEE Transactions on Electron Devices

Volume 36; Issue 5

1

Influence of quantum-well width on device performance of Al0.30Ga0.70As/In0.25Ga0.75 As (on GaAs) MODFETs

Nguyen, L.D., Radulescu, D.C., Foisy, M.C., Tasker, P.J., Eastman, L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 750 KB

english, 1989

2

Comparison of self-aligned and non-self-aligned GaAs E/D MESFETs

Wan, C.-F., Shichijo, H., White, W.A., Hudgens, R.D., Plumton, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 614 KB

english, 1989

3

Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures

Katoh, R., Kurata, M., Yoshida, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 756 KB

english, 1989

4

Thermal design studies of high-power heterojunction bipolar transistors

Guang-Bo Gao, Ming-Zhu Wang, Xiang Gui, Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 909 KB

english, 1989

5

A bipolar mechanism for alpha-particle-induced soft errors in GaAs integrated circuits

Umemoto, Y., Matsunaga, N., Mitsusada, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 820 KB

english, 1989

6

A criterion for stationary domain formation in GaAs MESFETs

Zhou, H., Pulfrey, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 572 KB

english, 1989

7

The effect of fluorine in silicon dioxide gate dielectrics

Wright, P.J., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 888 KB

english, 1989

8

Process integration and device performance of a submicrometer BiCMOS with 16-GHz ft double poly-bipolar devices

Yamaguchi, T., Yuzuriha, T.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 771 KB

english, 1989

9

Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulation

DeMoulin, P.D., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 956 KB

english, 1989

10

A computer model for the simulation of thin-film silicon-hydrogen alloy solar cells

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 603 KB

english, 1989

11

Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs

Hiergeist, P., Spitzer, A., Rohl, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 772 KB

english, 1989

12

The effects of annealing on the switching characteristics of an ion-implanted silicon MESFET

Chattopadhyay, S.N., Pal, B.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 685 KB

english, 1989

13

Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs

Higman, J.M., Hess, K., Hwang, C.G., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 929 KB

english, 1989

14

Measurement and modeling of the sidewall threshold voltage of mesa-isolated SOI MOSFETs

Matloubian, M., Sundaresan, R., Lu, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 552 KB

english, 1989

15

A design model for surface-termination optimization of off-state semiconductor devices

Waddell, J.B., Middleton, J., Board, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.01 MB

english, 1989

16

Static and dynamic transconductance of MOSFETs

Sharma, U., Booth, R.V.H., White, M.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 791 KB

english, 1989

17

Surface mobility in n+ and p+ doped polysilicon gate PMOS transistors

Amm, D.T., Mingam, H., Delpech, P., D'Ouville, T.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 639 KB

english, 1989

18

Infrared microscopy study of anomalous latchup characteristics due to current redistribution in different parasitic paths

Canali, C., Corsi, F., Muschitiello, M., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 955 KB

english, 1989

19

A simple analytical model for hot-carrier MOSFETs

El-Banna, M., El-Nokali, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 708 KB

english, 1989

20

Bulk and surface 1/f noise

Vandamme, L.K.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

21

Transient characteristics of n-channel hybrid Schottky injection FETs

Sin, J.K.O., Salama, C.A.T., Hou, L.-Z.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 842 KB

english, 1989

22

A high-voltage light-activated thyristor with a novel over-voltage self-protection structure

Shimizu, Y., Iyotani, R., Konishi, N., Yatsuo, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 425 KB

english, 1989

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