Suppression of the boron penetration induced dielectric...

IEEE Transactions on Electron Devices 1996 Vol. 43; Iss. 2

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Shye Lin Wu, Chung Len Lee, Tan Fu Lei
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Volume:
43
Year:
1996
Language:
english
Pages:
8
DOI:
10.1109/16.481732
File:
PDF, 849 KB
english, 1996
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