Volume 43; Issue 2

IEEE Transactions on Electron Devices

Volume 43; Issue 2

1

Reverse biased safe operating area of emitter switched thyristors

Iwamuro, N., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 614 KB

english, 1996

2

A novel GaAs power MESFET with low distortion characteristics employing semi-insulating setback layer under the gate

Furukawa, H., Tateoka, K., Miyatsuji, K., Sugimura, A., Ueda, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 906 KB

english, 1996

3

High temperature performance and operation of HFETs

Wilson, C.D., O'Neill, A.G., Baier, S.M., Nohava, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 905 KB

english, 1996

4

Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD

Chang-Luen Wu, Wei-Chou Hsu

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 634 KB

english, 1996

5

Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs

Shih-Hsien Lo, Chien-Ping Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 793 KB

english, 1996

6

Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1002 KB

english, 1996

7

Delay time analysis of submicron InP-based HEMT's

Youngwoo Kwon, Pavlidis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.09 MB

english, 1996

8

0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography

Takenaka, H., Ueda, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 999 KB

english, 1996

9

The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Liu, W., Khatibzadeh, A., Sweder, J., Hin-Fai Chau

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 865 KB

english, 1996

10

High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

Chen, K.J., Enoki, T., Maezawa, K., Arai, K., Yamamoto, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 766 KB

english, 1996

11

Formation of cobalt silicided shallow junction using implant into/through silicide technology and low temperature furnace annealing

Bin-Shing Chen, Mao-Chieh Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.04 MB

english, 1996

12

Extension of the Deal-Grove oxidation model to include the effects of nitrogen

Dimitrijev, S., Harrison, H.B., Sweatman, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 699 KB

english, 1996

13

A twin-channel (p and n) FT-CCD imager with cross-antiblooming

Roks, E., Esser, L.J.M., Narayan, S., Huinink, W.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.17 MB

english, 1996

14

An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images

Konuma, K., Asano, Y., Masubuchi, K., Utsumi, H., Tohyama, S., Endo, T., Azuma, H., Teranishi, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 822 KB

english, 1996

15

Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon

Shye Lin Wu, De Ming Chiao, Chung Len Lee, Tan Fu Lei

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1015 KB

english, 1996

16

A new quantitative model for weak inversion charge injection in MOSFET analog switches

Yen-Bin Gu, Ming-Jer Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 748 KB

english, 1996

17

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Shye Lin Wu, Chung Len Lee, Tan Fu Lei

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 849 KB

english, 1996

18

Nitrogen in-situ doped poly buffer LOCOS: simple and scalable isolation technology for deep-submicron silicon devices

Kobayashi, T., Nakayama, S., Miyake, M., Okazaki, Y., Inokawa, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.22 MB

english, 1996

19

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

Shin, H.C., Ik-Sung Lim, Racanelli, M., Wen-Ling Margaret Huang, Foerstner, J., Bor-Yuan Hwang

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 851 KB

english, 1996

20

The characteristics of polysilicon oxide grown in pure N2O

Chao Sung Lai, Tan Fu Lei, Chung Len Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 795 KB

english, 1996

21

An assessment of potential nonlinear circuit models for the characterization of resonant tunneling diodes

Woolard, D.L., Buot, F.A., Rhodes, D.L., Xiaojia Lu, Perlman, B.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.19 MB

english, 1996

22

Thermal impedance extraction for bipolar transistors

Zweidinger, D.T., Fox, R.M., Brodsky, J.S., Taewon Jung, Sang-Gug Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 640 KB

english, 1996

23

Large area MOS-gated power devices using fusible link technology

Venkatraman, P., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 591 KB

english, 1996

24

Quasi-three-dimensional modeling of a novel 2-D MESFET

Hurt, M.J., Shur, M.S., Peatman, W.C.B., Rabkin, P.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 251 KB

english, 1996

25

Near IR sensitive liquid crystal light valve with hydrogenated amorphous silicon photoconductor

Piyi Du, Gaorong Han, Zishang Ding

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 422 KB

english, 1996

26

A brief analysis of the field effect diode and breakdown transistor

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 526 KB

english, 1996

27

Device parameter optimization for reduced short channel effects in retrograde doping MOSFET's

Agrawal, B., De, V.K., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 465 KB

english, 1996

28

Scaling rule for OPFET

Pal, B.B., Chattopadhyay, S.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 198 KB

english, 1996

29

Nonstationary response of MSM photodetectors

Gvozdic, D.M., Radunovic, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски