A charge-based model for short-channel MOS transistor...

IEEE Transactions on Electron Devices 1990 Vol. 37; Iss. 4

A charge-based model for short-channel MOS transistor capacitances

Gharabagi, R., El-Nokali, M.A.
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Volume:
37
Year:
1990
Language:
english
Pages:
10
DOI:
10.1109/16.52443
File:
PDF, 753 KB
english, 1990
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