Volume 37; Issue 4

IEEE Transactions on Electron Devices

Volume 37; Issue 4

1

Band discontinuities: a simple electrochemical approach

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 357 KB

english, 1990

2

Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors

Fu, S.-T., Liu, S.-M.J., Das, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.29 MB

english, 1990

3

Peak temperature in high-power chips

Haji-Sheikh, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

4

New continuous heterostructure field-effect-transistor model and unified parameter extraction technique

Moon, B.-J., Byun, Y.H., Lee, K., Shur, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1020 KB

english, 1990

5

Reverse modeling of E/D logic submicrometer MODFETs and prediction of maximum extrinsic MODFET current gain cutoff frequency

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.44 MB

english, 1990

6

Characteristics including electron velocity overshoot for 0.1-μm-gate-length GaAs SAINT MESFET's

Enoki, T., Sugitani, S., Yamane, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 697 KB

english, 1990

7

The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET

Mishra, S., Singh, V.K., Pal, B.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 450 KB

english, 1990

8

Development of highly reliable Al-Si-Pd alloy interconnections for VLSI

Koubuchi, Y., Onuki, J., Fukada, S., Suwa, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 803 KB

english, 1990

9

Defect-free silicon film on SiO2 formed by zone melting recrystallization with high scanning speed

Lianjun Liu, Pei-Hsin Tsien, Zhijian Li

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 816 KB

english, 1990

10

Heat transport from a chip

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

11

A 310 K pixel bipolar imager (BASIS)

Tanaka, N., Hashimoto, S., Shinohara, M., Sugawa, S., Morishita, M., Matsumoto, S., Nakamura, Y., Ohmi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.16 MB

english, 1990

12

High-performance tantalum oxide capacitors fabricated by a novel reoxidation scheme

Byeon, S.G., Tzeng, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 735 KB

english, 1990

13

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

Heremans, P., Van den Bosch, G., Bellens, R., Groeseneken, G., Maes, H.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.42 MB

english, 1990

14

Simulation of substrate hot-electron injection

Pagaduan, F.E., Yang, C.Y., Toyabe, T., Nishioka, Y., Hamada, A., Igura, Y., Takeda, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

15

A reliable profiled lightly doped drain (PLD) cell for high-density submicrometer EPROM's and flash EEPROM's

Yoshikawa, K., Sato, M., Ohshima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 678 KB

english, 1990

16

Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature

Elewa, T., Balestra, F., Cristoloveanu, S., Hafez, I.M., Colinge, J.-P., Auberton-Herve, A.-J., Davis, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.34 MB

english, 1990

17

A complete model of the I-V characteristics for narrow-gate MOSFETs

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 941 KB

english, 1990

18

Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method

Gaitan, M., Mayergoyz, I.D., Korman, C.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 815 KB

english, 1990

19

Hardware implementation of a `wired-once' neural net in thin-film technology on a glass substrate

Busta, H.H., Ersoy, O.K., Pogemiller, J.E., Mackenzie, K.D., Standley, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 794 KB

english, 1990

20

An asymmetrical lightly doped source cell for virtual ground high-density EPROMs

Yoshikawa, K., Mori, S., Narita, K., Arai, N., Ohshima, Y., Kaneko, Y., Araki, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 689 KB

english, 1990

21

Trench sidewall implantation with a parallel scanned ion beam

Kakoschke, R., Kaim, R.E., van der Meulen, P.F.H.M., Westendorp, J.F.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 719 KB

english, 1990

22

Spatial uniformity of interface trap distribution in MOSFETs

Saks, N.S., Ancona, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 815 KB

english, 1990

23

A charge-based model for short-channel MOS transistor capacitances

Gharabagi, R., El-Nokali, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 753 KB

english, 1990

24

The electrical characteristics of bulk unipolar camel diodes in pre-amorphized silicon

Goldsmith, B.J., Brotherton, S.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 666 KB

english, 1990

25

Experimental transient analysis of the tunnel current in EEPROM cells

Bez, R., Cantarelli, D., Cappelletti, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 629 KB

english, 1990

26

Gate tunnel current in an MOS transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

27

Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface

Horio, K., Yanai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 614 KB

english, 1990

28

Comparison between analytical models and finite-difference simulations in transmission-line tap resistors and L-type cross-Kelvin resistors

Scorzoni, A., Lieneweg, U.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

29

Method of determining C-V profiles in semiconductor substrates and active layers

Holway, L.H., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 624 KB

english, 1990

30

Characterization of an n-p-n structure under ESD stress and proposed electrical model

Tailliet, F., Chante, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 958 KB

english, 1990

31

An analytic theory of the Auger transistor: a hot electron bipolar transistor

Tiwari, S., Wang, W.I., East, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.08 MB

english, 1990

32

Numerical analysis of breakdown voltage using quasi three dimensional device simulation

Yabuta, A., Hwang, C.G., Suzumura, M., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 887 KB

english, 1990

33

Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.20 MB

english, 1990

34

The smart power high-side switch: description of a specific technology, its basic devices, and monitoring circuitries

Elmoznine, A., Buxo, J., Bafleur, M., Rossel, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 804 KB

english, 1990

35

The current density distribution of the GaAs power MESFET: a theory for device burnout

Chang, C.-S., Day, D.-Y.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 208 KB

english, 1990

36

Change of gm(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

Canali, C., Corti, E., Gabrielli, B., Magistrali, F., Paccagnella, A., Sangalli, M., Tedesco, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 336 KB

english, 1990

37

Evaluation of the internal quantum efficiency and saturation current of heavily doped emitters

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 381 KB

english, 1990

38

Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics

Shenai, K., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 393 KB

english, 1990

39

Infrared observation of gate turn-off thyristor segment parameter nonuniformity

Hatle, M., Vobecky, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 425 KB

english, 1990

40

Hot-carrier degradation in bipolar transistors at 300 and 110 K-effect on BiCMOS inverter performance

Burnett, J.D., Hu, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 340 KB

english, 1990

41

Accelerated aging and long-term reliability study of ion-implanted GaAs MMIC IF amplifier

Esfandiari, R., O'Neill, T.J., Lin, T.S., Kono, R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 334 KB

english, 1990