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A lightly doped deep drain GaAs MESFET structure for linear amplifiers of personal handy-phone systems
Hirose, M., Matsuzawa, K., Mihara, M., Nitta, T., Kameyama, A., Uchitomi, N.Volume:
43
Year:
1996
Language:
english
Pages:
6
DOI:
10.1109/16.544375
File:
PDF, 721 KB
english, 1996