Volume 43; Issue 12

IEEE Transactions on Electron Devices

Volume 43; Issue 12

1

Striped-channel InAlAs/InGaAs HEMTs with shallow-grating structures

Youngwoo Kwon, Pavlidis, D., Hein, K., Brock, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 964 KB

english, 1996

2

Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers

Samelis, A., Pavlidis, D., Chandrasekhar, S., Lunardi, L.M., Rios, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 910 KB

english, 1996

3

A lightly doped deep drain GaAs MESFET structure for linear amplifiers of personal handy-phone systems

Hirose, M., Matsuzawa, K., Mihara, M., Nitta, T., Kameyama, A., Uchitomi, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 721 KB

english, 1996

4

Characteristics of silicon n+-n--n+ diode with sub-micrometer n - region

Nishizawa, J., Takeda, N., Masuoka, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 602 KB

english, 1996

5

An analytic expression of fmax for HBTs

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 601 KB

english, 1996

6

Electrical current instability at gate breakdown in GaAs MESFET

Vashhenko, V.A., Martynov, J.B., Sinkevitch, V.F., Tager, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 590 KB

english, 1996

7

Low frequency noise sources in InAlAs/InGaAs MODFETs

Viktorovitch, P., Rojo-Romeo, P., Leclercq, J.L., Letartre, X., Tardy, J., Oustric, M., Gendry, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.84 MB

english, 1996

8

One-dimensional equivalent circuit simulation of a photodiode-based spatial light modulator

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 953 KB

english, 1996

9

A switching device based on a-Si:H n-i-δp-i-n stacked structure: modeling and characterization

Caputo, D., de Cesare, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 485 KB

english, 1996

10

Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Parks, J.W., Smith, A.W., Brennan, K.F., Tarof, L.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 946 KB

english, 1996

11

High-density and high-quality frame transfer CCD imager with very low smear, low dark current, and very high blue sensitivity

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.40 MB

english, 1996

12

Technology and device scaling considerations for CMOS imagers

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.34 MB

english, 1996

13

Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes

Martins, R.F.P., Fortunato, E.M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.02 MB

english, 1996

14

Double-charge-sheet model for thin silicon-on-insulator films

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.04 MB

english, 1996

15

Sensitivity of subthreshold current to profile variations in long-channel MOSFETs

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 818 KB

english, 1996

16

Short-channel amorphous-silicon thin-film transistors

Chang-Dong Kim, Matsumura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 595 KB

english, 1996

17

Characterization of nonlinear substrate resistance in short-channel MOSFETs

Mihnea, A., Georgescu, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 831 KB

english, 1996

18

Simulation of a high performance MOSFET with a quantum wire structure incorporating a periodically bent Si-SiO2 interface

Tanaka, J., Sawada, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 588 KB

english, 1996

19

Modeling of the parasitic transistor-induced drain breakdown in MOSFETs

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 619 KB

english, 1996

20

Charge-pumping characterization of SiO2/Si interface in virgin and irradiated power VDMOSFETs

Habas, P., Prijic, Z., Pantic, D., Stojadinovic, N.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.41 MB

english, 1996

21

CMOS foundry implementation of Schottky diodes for RF detection

Milanovic, V., Gaitan, M., Marshall, J.C., Zaghloul, M.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 613 KB

english, 1996

22

Degradation and breakdown of thin silicon dioxide films under dynamic electrical stress

Nafria, M., Sune, J., Yelamos, D., Aymerich, X.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.43 MB

english, 1996

23

Characterization of layout dependent thermal coupling in SOI CMOS current mirrors

Tenbroek, B.M., Redman-White, W., Lee, M.S.L., Bunyan, R.J.T., Uren, M.J., Brunson, K.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 724 KB

english, 1996

24

Electromigration drift and threshold in Cu thin-film interconnects

Frankovic, R., Bernstein, G.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.02 MB

english, 1996

25

Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques

Tenbroek, B.M., Lee, M.S.L., Redman-White, W., Bunyan, J.T., Uren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1016 KB

english, 1996

26

Low-temperature characteristics of well-type guard rings in epitaxial CMOS

Chih-Yao Huang, Ming-Jer Chen, Jeng-Kuo Jeng, Ching-Yuan Wu

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.46 MB

english, 1996

27

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

Simoen, E., Decoutere, S., Cuthbertson, A., Claeys, C.L., Deferm, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 946 KB

english, 1996

28

Analysis of conductivity degradation in gold/platinum-doped silicon

Valdinoci, M., Colalongo, L., Pellegrini, A., Rudan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 774 KB

english, 1996

29

2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)

Takahashi, Y., Koga, T., Kirihata, H., Seki, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1004 KB

english, 1996

30

Optimization of power diode characteristics by means of ion irradiation

Vobecky, J., Hazdra, P., Homola, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 974 KB

english, 1996

31

Broadbanding of a gyro-TWT by dielectric-loading through dispersion shaping

Rao, S.J., Jain, P.K., Basu, B.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.04 MB

english, 1996

32

The optoelectronic response of a laterally contacted 2-D MESFET

Tsai, R., Schuermeyer, F., Peatman, W.C.B., Shur, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

33

TiW/Cu/TiW interconnection lines patterned by IR-assisted RIE

Furuya, A., Hosoi, N., Koyama, K., Ohshita, Y., Numasawa, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

34

Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes

Dunn, G.M., Rees, G.J., David, J.P.R., Plimmer, S.A., Herbert, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

35

Reverse leakage current calculations for SiC Schottky contacts

Crofton, J., Sriram, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 390 KB

english, 1996

36

Evidence of reduced maximum E-field in quasi-SOI MOSFETs

Chi-Man Ng, Nguyen, C.T., Kuehne, S.C., Wong, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 562 KB

english, 1996

37

Further Comments on “Threshold voltage model for deep-submicrometer MOSFETs” and its extension to subthreshold operation

Niu, G.F., Ruan, G., Chen, R.M.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 147 KB

english, 1996

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