Electrical current instability at gate breakdown in GaAs...

IEEE Transactions on Electron Devices 1996 Vol. 43; Iss. 12

Electrical current instability at gate breakdown in GaAs MESFET

Vashhenko, V.A., Martynov, J.B., Sinkevitch, V.F., Tager, S.
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Volume:
43
Year:
1996
Language:
english
Pages:
5
DOI:
10.1109/16.544378
File:
PDF, 590 KB
english, 1996
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