A simple model for quantum mechanical effects in hole...

IEEE Transactions on Electron Devices 1997 Vol. 44; Iss. 7

A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

Hareland, S.A., Jallepalli, S., Chindalore, G., Shih, W.-K., Tasch, A.F., Jr., Maziur, C.M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
44
Year:
1997
Language:
english
Pages:
2
DOI:
10.1109/16.595947
File:
PDF, 60 KB
english, 1997
Conversion to is in progress
Conversion to is failed