Volume 44; Issue 7

IEEE Transactions on Electron Devices

Volume 44; Issue 7

1

RTD/2-D MESFET logic element for compact, ultra-low-power electronics

Robertson, J., Ytterdal, T., Peatman, W.C.B., Tsai, R.S., Brown, E.R., Shur, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 193 KB

english, 1997

2

Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs

Abrokwah, J.K., Lucero, R., Hallmark, J.A., Bernhardt, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 157 KB

english, 1997

3

The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs

Lopez-Gonzalez, J.M., Prat, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 150 KB

english, 1997

4

InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology

Dehe, A., Pavlidis, D., Hong, K., Hartnagel, H.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 180 KB

english, 1997

5

Experimental evidence of surface conduction contributing to transconductance dispersion in GaAs MESFETs

Balakrishnan, V.R., Kumar, V., Ghosh, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 172 KB

english, 1997

6

MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics

Marsh, P., Pavlidis, D., Hong, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

7

A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSix storage nodes for Gb-scale DRAMs

Yamamichi, S., Lesaicherre, P., Yamaguchi, H., Takemura, K., Sone, S., Yabuta, H., Sato, K., Tamura, T., Nakajima, K., Ohnishi, S., Tokashiki, K., Hayashi, Y., Kato, Y., Miyasaka, Y., Yoshida, M., Ono

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 226 KB

english, 1997

8

Extracting MOS parameter variations using dual-drain MOSFET offset

Nixon, O., Nathan, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 318 KB

english, 1997

9

CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics

Beck, D., Herrmann, M., Kasper, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 267 KB

english, 1997

10

Bias temperature instability in hydrogenated thin-film transistors

Bhat, N., Cao, M., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 169 KB

english, 1997

11

Single-electron logic device based on the binary decision diagram

Asahi, N., Akazawa, M., Amemiya, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 180 KB

english, 1997

12

Quasi-saturation capacitance behavior of a DMOS device

Chung-Mon Liu, Kuo, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 248 KB

english, 1997

13

A novel on-chip electrostatic discharge (ESD) protection with common discharge line for high-speed CMOS LSIs

Narita, K., Horiguchi, Y., Fujii, T., Nakamura, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 229 KB

english, 1997

14

Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy

Hon-Sum Wong, Chan, K.K., Lee, Y., Roper, P., Taur, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 135 KB

english, 1997

15

Thin oxide thickness extrapolation from capacitance-voltage measurements

Walstra, S.V., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 244 KB

english, 1997

16

Tunneling source-body contact for partially-depleted SOI MOSFET

Chen, V.M., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 139 KB

english, 1997

17

The behavior of very high current density power MOSFETs

Evans, J., Amaratunga, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

18

Rigorous tape analysis of inhomogeneously-loaded helical slow-wave structures

Ghosh, S., Jain, P.K., Basu, B.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 606 KB

english, 1997

19

Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 90 KB

english, 1997

20

A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

Hareland, S.A., Jallepalli, S., Chindalore, G., Shih, W.-K., Tasch, A.F., Jr., Maziur, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 60 KB

english, 1997

21

Influence of size factors in the electroluminescent emission of large area GaAs IREDs

Reyna, R.F., Marti, A., Algora, C., Maroto, J.C., Araujo, G.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 116 KB

english, 1997

22

Turn-on process in 4H-SiC thyristors

Levinshtein, M.E., Palmour, J.W., Rumyanetsev, S.L., Singh, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 96 KB

english, 1997

23

Phase noise and a low-frequency noise reduction method in bipolar transistors

Takagi, K., Serikawa, S., Kurita, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 53 KB

english, 1997

24

Photogenerated carrier collection in solar cells in terms of dark carrier distribution: three dimensions

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 72 KB

english, 1997