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0.1-μm p+-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques
Wada, S., Furuhata, N., Tokushima, M., Fukaishi, M., Hida, H., Maeda, T.Volume:
45
Year:
1998
Language:
english
Pages:
7
DOI:
10.1109/16.678505
File:
PDF, 212 KB
english, 1998