Volume 45; Issue 6

IEEE Transactions on Electron Devices

Volume 45; Issue 6

1

A quasi-two-dimensional HEMT model for DC and microwave simulation

Singh, R., Snowden, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 108 KB

english, 1998

2

On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's

Anwar, A.F.M., Webster, R.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 181 KB

english, 1998

3

Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT's with platinum buried gates

Tanimoto, T., Ohbu, I., Tanaka, S., Kawai, A., Kudo, M., Terano, A., Nakamura, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 166 KB

english, 1998

4

0.1-μm p+-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques

Wada, S., Furuhata, N., Tokushima, M., Fukaishi, M., Hida, H., Maeda, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 212 KB

english, 1998

5

Thermal behavior depending on emitter finger and substrate configurations in power heterojunction bipolar transistors

Chang-Woo Kim, Goto, N., Honjo, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 279 KB

english, 1998

6

High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity

Iwai, T., Ohara, S., Yamada, H., Yamaguchi, Y., Imanishi, K., Jeshin, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 162 KB

english, 1998

7

1/f noise in InGaAs/GaAs linear graded buffer layers

Vaitneia, J.F., Canido, J.A., Izpura, J.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 192 KB

english, 1998

8

Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

Flitcroft, R.M., David, J.P.R., Houston, P.A., Button, C.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 120 KB

english, 1998

9

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures

Meng Hwang Liu, Yeong Her Wang, Mau Phon Houng

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 161 KB

english, 1998

10

Low-frequency noise properties of selectively dry etched InP HEMT's

Duran, H.C., Ren, L., Beck, M., Py, M.A., Begems, M., Bachtold, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 187 KB

english, 1998

11

A detailed physical model for ion implant induced damage in silicon

Tian, S., Morris, M.F., Morris, S.J., Obradovic, B., Geng Wang, Tasch, A.F., Snell, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 302 KB

english, 1998

12

A physical model for threshold voltage instability in Si3N4-gate H+-sensitive FET's (pH ISFET's)

Jamasb, S., Collins, S.D., Smith, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 159 KB

english, 1998

13

A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-μm CMOS logic technologies

Chatterjee, A., Rodder, M., Ih-Chin Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 178 KB

english, 1998

14

Gate engineering for deep-submicron CMOS transistors

Bin Yu, Dong-Hyuk Ju, Wen-Chin Lee, Kepler, N., Tsu-Jae King, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 360 KB

english, 1998

15

Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model

Janik, T., Majkusiak, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 233 KB

english, 1998

16

Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCD

Kwon-Young Choi, Jong-Wook Lee, Min-Koo Han

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 270 KB

english, 1998

17

A low thermal budget self-aligned Ti silicide technology using germanium implantation for thin-film SOI MOSFET's

Ping Liu, Hsiao, T.C., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 190 KB

english, 1998

18

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Kondo, M., Oda, K., Ohue, E., Shimamoto, H., Tanabe, M., Onai, T., Washio, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

19

High performance of silicided silicon-sidewall source and drain (S 4D) structure

Yoshitomi, T., Saito, M., Ohguro, T., One, M., Momose, H.S., Morifuji, E., Morimoto, T., Katsumata, Y., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 147 KB

english, 1998

20

On the retention time distribution of dynamic random access memory (DRAM)

Hamamoto, T., Sugiura, S., Sawada, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 219 KB

english, 1998

21

Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's

Biesemans, S., Hendriks, M., Kubicek, S., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 263 KB

english, 1998

22

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

Choon-Leong Lou, Wai-Kin Chim, Chan, D.S.-H., Tang Pan

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 250 KB

english, 1998

23

Plasma ion implantation hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source

Shu Qin, Yuanzhong Zhou, Nakatsugawa, T., Husein, I.F., Chung Chan, Tsu-Jae King

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 118 KB

english, 1998

24

A front-gate charge-pumping method for probing both interfaces in SOI devices

Yujun Li, Ma, T.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 235 KB

english, 1998

25

On a universal parameter of intrinsic oxide breakdown based on analysis of trap-generation characteristics

Sakakibara, K., Ajika, N., Miyoshi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 146 KB

english, 1998

26

Self-consistent 2-D model for quantum effects in n-MOS transistors

Spinelli, A.S., Benvenuti, A., Pacelli, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 178 KB

english, 1998

27

Modeled tunnel currents for high dielectric constant dielectrics

Vogel, E.M., Ahmed, K.Z., Hornung, B., Henson, W.K., McLarty, P.K., Lucovsky, G., Hauser, J.R., Wortman, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 142 KB

english, 1998

28

Microbridge plasma display panel with high gas pressure

Kyung Cheol Choi, Saville, G.F., Lee, S.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 113 KB

english, 1998

29

Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM

Young-Bog Park, Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 241 KB

english, 1998

30

Measurement of the switching speed of single FET's

Jenkins, K.A., Burghartz, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 70 KB

english, 1998

31

Analytical model for the surface field distribution of SOI RESURF devices

Sang-Koo Chung, Seung-Youp Han

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 132 KB

english, 1998

32

Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics

Sun, J.J., Osburn, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 129 KB

english, 1998

33

Reduction of interface traps in p-channel MOS transistors during channel-hot-hole stress

Han, K.M., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 99 KB

english, 1998

34

On the “Effect of diffusion and modulated frequency in an ion-implanted OPFET” [correction]

Asthana, N.C., Singh, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 37 KB

english, 1998

35

Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 25 KB

english, 1998