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A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs
Iniguez, B., Dessard, V., Flandre, D., Gentinne, B.Volume:
46
Year:
1999
Language:
english
Pages:
9
DOI:
10.1109/16.808063
File:
PDF, 277 KB
english, 1999