Volume 46; Issue 12

IEEE Transactions on Electron Devices

Volume 46; Issue 12

1

Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light

Takanashi, Y., Takahata, K., Muramoto, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 174 KB

english, 1999

2

Temperature and optical characteristics of tin oxide membrane gate ISFET

Hung-Kwei Liao, En-Shieh Yang, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun, Shen-Kan Hsiung

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 109 KB

english, 1999

3

Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

Kimura, M., Yudasaka, I., Kanbe, S., Kobayashi, H., Kiguchi, H., Seki, S., Miyashita, S., Shimoda, T., Ozawa, T., Kitawada, K., Nakazawa, T., Miyazawa, W., Ohshima, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

4

The dynamic response analysis of a pyroelectric thin-film infrared sensor with thermal isolation improvement structure

Jyh-Jier Ho, Fang, Y.K., Lee, W.J., Chen, F.Y., Hsieh, W.T., Ting, S.F., Ju, M.S., Huang, S.B., Kun-Hsien Wu, Chen, C.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 278 KB

english, 1999

5

A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs

Iniguez, B., Dessard, V., Flandre, D., Gentinne, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 277 KB

english, 1999

6

Effects of Ir electrodes on barium strontium titanate thin-film capacitors for high-density memory application

Tung-Sheng Chen, Balu, V., Katakam, S., Jian-Hung Lee, Lee, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 666 KB

english, 1999

7

Interface properties of NO-annealed N2O-grown oxynitride

Lai, P.T., Xu, J.P., Cheng, Y.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 85 KB

english, 1999

8

Enhanced injection in n++-poly/SiOx/SiO2 /p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment

Irrera, F., Russo, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 268 KB

english, 1999

9

Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire

Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 283 KB

english, 1999

10

A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates

Brodsky, J.S., Fox, R.M., Zweidinger, D.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 274 KB

english, 1999

11

Dynamic snap-back induced programming failure in stacked gate flash EEPROM cells and efficient remedying technique

Wuyun Quan, Myung Kwan Cho, Kim, D.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 106 KB

english, 1999

12

The characteristics of plasma display with the cylindrical hollow cathode

Kyung Cheol Choi, Heung-Sik Tae

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 107 KB

english, 1999

13

A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode

Ruden, P.P., Krishnankutty, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 62 KB

english, 1999

14

Analysis of GaAs OPFET with improved optical absorption under back illumination

Roy, N.S., Pal, B.B., Khan, R.U.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 106 KB

english, 1999

15

Effects of thermal processes after silicidation on the performance of TiSi2/polysilicon gate device

Se-Aug Jang, Tae-Kyun Kim, In-Seok Yeo, Hyeon-Soo Kim, Sahng-Kyoo Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

16

Comments on "Negative capacitance effect in semiconductor devices" [by M. Ershov et al., with reply]

Jian-Guo Ma, Kiat Seng Yeo, Manh Anh Do

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 42 KB

english, 1999

17

Author index

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 331 KB

english, 1999

18

Subject index

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 405 KB

english, 1999