A model for the temperature-dependent saturated ID -VD...

IEEE Transactions on Electron Devices 1991 Vol. 38; Iss. 9

A model for the temperature-dependent saturated ID -VD characteristics of an a-Si:H thin-film transistor

Lee, W.-S., Neudeck, G.W., Choi, J., Luan, S.
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Volume:
38
Year:
1991
Language:
english
Pages:
5
DOI:
10.1109/16.83732
File:
PDF, 535 KB
english, 1991
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