Volume 38; Issue 9

IEEE Transactions on Electron Devices

Volume 38; Issue 9

1

Laser-induced melting of thin conducting films. II. Heat-dissipating substrates

Cohen, S.S., Wyatt, P.W., Bernstein, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 727 KB

english, 1991

2

Strained-insulator InxAl1-xAs/n+-In0.53Ga 0.47As heterostructure field-effect transistors

Bahl, S.R., Azzam, W.J., del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 738 KB

english, 1991

3

Mixed-mode simulation of DX trap-induced slow transient effects on AlGaAs/GaAs HEMT inverters

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 533 KB

english, 1991

4

In0.52Al0.48As/InxGa1-x As (0.53&les;x&les;0.70) lattice-matched and strained heterostructure insulated-gate FETs

Chan, Y.-J., Pavlidis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 786 KB

english, 1991

5

Capacitances in double-barrier tunneling structures

Genoe, J., Van Hoof, C., Van Roy, W., Smet, J.H., Fobelets, K., Mertens, R.P., Borghs, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 643 KB

english, 1991

6

Alpha-particle-induced charge collection in p-n junction diodes in semi-insulating GaAs substrates

Umemoto, Y., Kagaya, O., Kawata, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 500 KB

english, 1991

7

Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit

Costa, D., Liu, W.U., Harris, J.S., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 532 KB

english, 1991

8

Two-dimensional implications of a purely reactive model for plasma etching

Gerodolle, A.F., Pelletier, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 842 KB

english, 1991

9

Effect of arsenic implantation on electrical characteristics of LPCVD WSi2/n-Si Schottky contacts

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

10

An optimized 850°C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process

Gross, B.J., Krisch, K.S., Sodini, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 649 KB

english, 1991

11

Laser-induced melting of thin conducting films. I. The adiabatic approximation

Cohen, S.S., Wyatt, P.W., Chapman, G.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 981 KB

english, 1991

12

Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs

Aoyama, T., Koike, Y., Okajima, Y., Konishi, N., Suzuki, T., Miyata, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 465 KB

english, 1991

13

Flux-angle characteristic of a LED: an approximate equation

Ogorelec, Z., Radic, V.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 203 KB

english, 1991

14

Electroosmotic display device

Kohashi, T., Kurosawa, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 562 KB

english, 1991

15

A model for the temperature-dependent saturated ID -VD characteristics of an a-Si:H thin-film transistor

Lee, W.-S., Neudeck, G.W., Choi, J., Luan, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 535 KB

english, 1991

16

Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectors

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

17

An analytical model for snapback in n-channel SOI MOSFET's

Huang, J.S.T., Kueng, J.S., Fabian, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 897 KB

english, 1991

18

Switching characteristics of multigrain (polycrystalline silicon) barrier devices

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 581 KB

english, 1991

19

A temperature-dependent SOI MOSFET model for high-temperature application (27 °C-300 °C)

Jeon, D.-S., Burk, D.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 840 KB

english, 1991

20

Demonstration of the importance of the oxide breakup in polysilicon-contacted-emitter modeling

Egley, J.L., Gray, J.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 631 KB

english, 1991

21

New observation of gate current in off-state MOSFET

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 301 KB

english, 1991

22

High performance characteristics in trench dual-gate MOSFET (TDMOS)

Mizuno, T., Saitoh, Y., Sawada, S., Shinozaki, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 666 KB

english, 1991

23

Optimum base doping profile for minimum base transit time

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 552 KB

english, 1991

24

Junction breakdown instabilities in deep trench isolation structures

Tsang, Y.L., Aitken, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 486 KB

english, 1991

25

An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances

Taft, R.C., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 1.48 MB

english, 1991

26

An analytical model of diffusion current in intrinsically gettered structures based on intentional contamination experiments

Pearce, C.W., Jaccodine, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 500 KB

english, 1991

27

Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parameters

Amerasekera, A., van Roozendaal, L., Bruines, J., Kuper, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 819 KB

english, 1991

28

Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

Wang, C.H., Neugroschel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 1.10 MB

english, 1991

29

Surface breakdown and stability of high-voltage planar junctions

Stengl, R., Falck, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 804 KB

english, 1991

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