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Gate length scaling for Al0.2Ga0.8N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect
Ando, Y., Contrata, W., Samoto, N., Miyamoto, H., Matsunaga, K., Kuzuhara, M., Kunihiro, K., Kasahara, K., Nakayama, T., Takahashi, Y., Hayama, N., Ohno, Y.Volume:
47
Year:
2000
Language:
english
Pages:
8
DOI:
10.1109/16.870582
File:
PDF, 686 KB
english, 2000