Volume 47; Issue 10

IEEE Transactions on Electron Devices

Volume 47; Issue 10

1

Theory of the Monte Carlo method for semiconductor device simulation

Kosina, H., Nedjalkov, M., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 510 KB

english, 2000

2

Microscopic theory of hydrogen in silicon devices

Van de Walle, C.G., Tuttle, B.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 129 KB

english, 2000

3

Challenges for atomic scale modeling in alternative gate stack engineering

Kawamoto, A., Jameson, J., Kyeongjae Cho, Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 249 KB

english, 2000

4

Band-structure calculations of SiO2 by means of Hartree-Fock and density-functional techniques

Gnani, E., Reggiani, S., Colle, R., Rudan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 632 KB

english, 2000

5

Large-scale atomistic modeling of nanoelectronic structures

Nakano, A., Bachlechner, M.E., Branicio, P., Campbell, T.J., Ebbsjo, I., Kalia, R.K., Madhukar, A., Ogata, S., Omeltchenko, A., Rino, J.P., Shimojo, F., Walsh, P., Vashishta, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

6

Single-electron device simulation

Scholze, A., Schenk, A., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 674 KB

english, 2000

7

Circuit/device modeling at the quantum level

Zhiping Yu, Dutton, R.W., Kiehl, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 160 KB

english, 2000

8

Memory cell simulation on the nanometer scale

Muller, H.-O., Mizuta, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 205 KB

english, 2000

9

Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics

Gross, W.J., Vasileska, D., Ferry, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 166 KB

english, 2000

10

Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs

Yasuda, Y., Takamiya, M., Hiramoto, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 430 KB

english, 2000

11

Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS

Chang-Hoon Choi, Wu, Y., Jung-Suk Goo, Zhiping Yu, Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 251 KB

english, 2000

12

Modeling of direct tunneling current through gate dielectric stacks

Mudanai, S., Yang-Yu Fan, Qiqing Ouyang, Tasch, A.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 182 KB

english, 2000

13

Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

Abramo, A., Cardin, A., Selmi, L., Sangiorgi, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 323 KB

english, 2000

14

Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

Williams, S.C., Kim, K.W., Holton, W.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 210 KB

english, 2000

15

Monte Carlo simulation of the CHISEL flash memory cell

Bude, J.D., Pinto, M.R., Smith, R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 285 KB

english, 2000

16

Monte Carlo simulation of noncubic symmetry semiconducting materials and devices

Brennan, K.F., Bellotti, E., Farahmand, M., Nilsson, H.-E., Ruden, P.P., Yumin Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 215 KB

english, 2000

17

Efficient Monte Carlo device modeling

Bufler, F.M., Schenk, A., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

18

Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

Saraniti, M., Goodnick, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 439 KB

english, 2000

19

Simulation of semiconductor quantum well lasers

Alam, M.A., Hybertsen, M.S., Smith, R.K., Baraff, G.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

20

A multidimensional laser simulator for edge-emitters including quantum carrier capture

Witzigmann, B., Witzig, A., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 1.18 MB

english, 2000

21

Monte Carlo modeling of transient recharging processes in quantum-well infrared photodetectors

Ryzhii, M., Ryzhii, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 214 KB

english, 2000

22

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

Qiqing Ouyang, Xiangdong Chen, Mudanai, S.P., Xin Wang, Kencke, D.L., Tasch, A.F., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

23

Monte Carlo simulator for the design optimization of low-noise HEMTs

Mateos, J., Gonzalez, T., Pardo, D., Hoel, V., Cappy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 414 KB

english, 2000

24

Development of global calibration for accurate GaAs-PHEMT simulation

Brech, H., Grave, T., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 621 KB

english, 2000

25

Gate length scaling for Al0.2Ga0.8N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect

Ando, Y., Contrata, W., Samoto, N., Miyamoto, H., Matsunaga, K., Kuzuhara, M., Kunihiro, K., Kasahara, K., Nakayama, T., Takahashi, Y., Hayama, N., Ohno, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 686 KB

english, 2000

26

Application of silicon-based process simulation tools to the fabrication of heterojunction bipolar transistors

Fields, C.H., Thomas, S., III

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 2.57 MB

english, 2000

27

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

Shuming Xu, Gan, K.P., Samudra, G.S., Liang, Y.C., Sin, J.K.O.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 525 KB

english, 2000

28

A percolative approach to reliability of thin films

Pennetta, C., Reggiani, L., Trefan, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 463 KB

english, 2000

29

Langevin forces and generalized transfer fields for noise modeling in deep submicron devices

Shiktorov, P., Starikov, E., Gruzinskis, V., Gonzalez, T., Mateos, J., Pardo, D., Reggiani, L., Varani, L., Vaissiere, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 200 KB

english, 2000

30

Viscoelastic material behavior: models and discretization used in process simulator DIOS

Pomp, A., Zelenka, S., Strecker, N., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 758 KB

english, 2000