Influence of quantum well width on DC and RF device performance in pseudomorphic Al0.30Ga0.70As/In0.25Ga 0.75As MODFETs
Nguyen, L.D., Radulescu, D.C., Tasker, P.J., Foisy, M.C., Eastman, L.F.Volume:
35
Year:
1988
Language:
english
Pages:
2
DOI:
10.1109/16.8885
File:
PDF, 302 KB
english, 1988