Volume 35; Issue 12

IEEE Transactions on Electron Devices

Volume 35; Issue 12

1

Mechanical stress as a function of temperature in aluminum films

Gardner, D.S., Flinn, P.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.26 MB

english, 1988

2

46th Annual Device Research Conference

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 167 KB

english, 1988

3

Impact of the gate-drain overlapped device (GOLD) for deep submicrometer VLSI

Izawa, R., Kure, T., Takeda, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 505 KB

english, 1988

4

Soft-error-immune switched-load-resistor memory cell

Homma, N., Nakamura, T., Hayashida, T., Matsumoto, M., Nakazato, K., Onai, T., Tamaki, Y., Namba, M., Sagara, K., Ikeda, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 742 KB

english, 1988

5

Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design

Tang, D.D.-L., Hackbarth, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 676 KB

english, 1988

6

Inherent and stress-induced leakage in heavily doped silicon junctions

Hackbarth, E., Tang, D.D.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.08 MB

english, 1988

7

The influence of tilted source-drain implants on high-field effects in submicrometer MOSFETs

Baker, F.K., Pfiester, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 609 KB

english, 1988

8

Total dose and transient radiation effects on GaAs MMICs

Meulenberg, A., Hung, H.-L.A., Peterson, K.E., Anderson, W.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 989 KB

english, 1988

9

Internal chip ESD phenomena beyond the protection circuit

Duvvury, C., Rountree, R.N., Adams, O.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 873 KB

english, 1988

10

The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 964 KB

english, 1988

11

On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stress

Fu, K.-Y., Pyle, R.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.18 MB

english, 1988

12

A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currents

Harrison, J.W., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 870 KB

english, 1988

13

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

Chen Yu-Zhang, Tang Ting-Wei

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 743 KB

english, 1988

14

Hot-electron reliability and ESD latent damage

Aur, S., Chatterjee, A., Polgreen, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 521 KB

english, 1988

15

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Heremans, P., Bellens, R., Groeseneken, G., Maes, H.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.79 MB

english, 1988

16

Suppression of hot-carrier effects in submicrometer CMOS technology

Chen Min-Liang, Leung Chung-Wai, Cochran, W.T., Jungling, W., Dziuba, C., Yang Tungsheng

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 970 KB

english, 1988

17

Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Ancona, M.G., Saks, N.S., McCarthy, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 895 KB

english, 1988

18

Simulation of hot-electron trapping and aging of nMOSFETs

Roblin, P., Samman, A., Bibyk, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 866 KB

english, 1988

19

Modeling hot-carrier effects in polysilicon emitter bipolar transistors

Burnett, J.D., Hu Chenming

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 629 KB

english, 1988

20

Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen

Miki, H., Noguchi, M., Yokogawa, K., Kim Bo-Woo, Asada, K., Sugano, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 829 KB

english, 1988

21

The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFETs

Chen Ih-Chin, Choi Jeong Yeol, Hu Chenming

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 597 KB

english, 1988

22

High-field-induced degradation in ultra-thin SiO2 films

Olivo, P., Nguyen, T.N., Ricco, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 958 KB

english, 1988

23

Modeling and characterization of gate oxide reliability

Lee, J.C., Chen Ih-Chin, Hu Chenming

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1013 KB

english, 1988

24

Microwave performance of ion-implanted InP JFETs

Kruppa, W., Boos, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 837 KB

english, 1988

25

Unilateral gain of heterojunction bipolar transistors at microwave frequencies

Prasad, S., Lee Wai, Fonstad, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 678 KB

english, 1988

26

Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors

Ando, Y., Itoh, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 749 KB

english, 1988

27

Generalized gradual channel modeling of field-effect transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1.31 MB

english, 1988

28

Analysis and simulation of the quantum well injection transit time diode

Inchae Song, Dee-son Pan

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 758 KB

english, 1988

29

Analytical model for oblique ion reflection at the Si surface

Mizuno, T., Higuchi, T., Ishiuchi, H., Matsumoto, Y., Saitoh, Y., Sawada, S., Shinozaki, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 671 KB

english, 1988

30

Titanium silicide interconnect technology for submicrometer DRAMs

Fukumoto, M., Yoshida, T., Tateiwa, K., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 551 KB

english, 1988

31

Application of radiation-tolerant field oxides and passivation films to the bipolar IC process

Kato, M., Watanabe, K., Okabe, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 581 KB

english, 1988

32

Device dependence of charging effects from high-current ion implantation

Felch, S.B., Basra, V.K., McKenna, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 486 KB

english, 1988

33

Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation

Paulter, N.G., Gibbs, A.J., Sinha, D.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 599 KB

english, 1988

34

Long-term operation of planar InGaAs/InP p-i-n photodiodes

Bauer, J.G., Trommer, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 533 KB

english, 1988

35

An ultraminiature solid-state pressure sensor for a cardiovascular catheter

Hin-Leung Chau, Wise, K.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 875 KB

english, 1988

36

High-voltage poly-Si TFTs with multichannel structure

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 555 KB

english, 1988

37

Measurement of MOSFET channel potential profile

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 456 KB

english, 1988

38

1/f noise in the linear region of LDD MOSFETs

Tsai, C.Y.H., Jeng Gong

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 398 KB

english, 1988

39

Lateral nonuniformities and the MOSFET mobility step near threshold

Wikstrom, J.A., Viswanathan, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 601 KB

english, 1988

40

Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFETs

Kaga, T., Sakai, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 639 KB

english, 1988

41

A pulsed interface-probing technique for MOS interface characterization at mid-gap levels

Cilingiroglu, U.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 575 KB

english, 1988

42

Emitter resistance and performance tradeoff of submicrometer self-aligned double-polysilicon bipolar devices

Yamaguchi, T., Yu, Y.-C.S., Drobny, V.F., Witkowski, A.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 901 KB

english, 1988

43

A better understanding of the channel mobility of Si MOSFETs based on the physics of quantized subbands

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 611 KB

english, 1988

44

A single-chip SQUID magnetometer

Fujimaki, N., Tamura, H., Imamura, T., Hasuo, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 1015 KB

english, 1988

45

Nonuniformity-induced error in mask misregistration test structures

Dikeman, J.M., Roenker, K.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 479 KB

english, 1988

46

Double-layer process for wide gate recess etch

Lamarre, P., Zaitlin, M.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 430 KB

english, 1988

47

High-temperature latchup characteristics in VLSI CMOS circuits

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 327 KB

english, 1988

48

First observation of ballistic holes in a p-type THETA device

Heiblum, M., Seo, K., Meier, H.P., Hickmott, T.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 136 KB

english, 1988

49

GaAs on Si: progress and promise

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 136 KB

english, 1988

50

Optical digital computers-devices and architecture

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 136 KB

english, 1988

51

Pulse-field-assisted bonding for SOI devices

Arimoto, Y., Gotou, H., Ueno, K., Imaoka, K., Ozeki, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 273 KB

english, 1988

52

Submicrometer CMOS device fabrication using gas immersion laser doping (GILD)

Carey, P.G., Weiner, K.H., Sigmon, T.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 148 KB

english, 1988

53

Tunable frequency Gunn diodes fabricated by focused ion beam implantation

Lezec, H.J., Ismail, K., Mahoney, L.J., Shepard, M.I., Antoniadis, D.A., Melngailis, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 148 KB

english, 1988

54

High-performance submicrometer channel MOSFETs for analog applications

Hung, M.Y., Antoniadis, D.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 277 KB

english, 1988

55

Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's

Shahidi, G.G., Antoniadis, D.A., Smith, H.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 140 KB

english, 1988

56

Subhalf-micrometer buried-channel PFET design considerations

Nowak, E.J., Bhattacharyya, A., Klett, A., Mann, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 140 KB

english, 1988

57

Surface potential fluctuations in MOS devices induced by the random distribution of channel dopant ions

Watt, J.T., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 153 KB

english, 1988

58

Transconductance enhancement mechanisms in ultra-thin (&les;1000 Å) silicon-on-insulator MOSFETs

Sturm, J.C., Tokunaga, K., Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 286 KB

english, 1988

59

Alpha-particle-induced hard error mechanism in DRAMs

Kurosawa, H., Iwai, H., Ishihara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 281 KB

english, 1988

60

ITF-BSCC technology for 16 Mbit DRAM cell

Takase, S., Itoh, H., Wakamatsu, H., Kita, A., Ichikawa, F., Ino, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 146 KB

english, 1988

61

Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage

Van Zeghbroeck, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 146 KB

english, 1988

62

Band-to-band tunneling and thermal generation gate-induced drain leakage

Voldman, S.H., Brachitta, J.A., Fitzgerald, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 146 KB

english, 1988

63

High bandwidth planar InP/InGaAs avalanche photodiodes

Ekholm, D.T., Geary, J.M., Hollenhorst, J.N., Mattera, V.D., Jr., Pawelek, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 154 KB

english, 1988

64

Lateral collection doping superlattice photodiodes

Danner, A.D., Dzurko, K.M., Dapkus, P.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 154 KB

english, 1988

65

Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity

Kim, S.J., Guth, G., Vella-Coleiro, G.P., Seabury, C.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

66

Charge amplification by impact ionization in charge-coupled devices

Gajar, S.A., Burke, B.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

67

New quantum well long-wavelength (λ=10 μm) detectors and novel superlattice transport physics

Levine, B.F., Bethea, C.G., Walker, J., Malik, R.J., Cho, A.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 156 KB

english, 1988

68

Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers

Zebda, Y., Lipa, R., Tutt, M., Pavlidis, D., Bhattacharya, P.K., Pamulapati, J., Oh, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 156 KB

english, 1988

69

A 2-μm BiCMOS process utilizing selective epitaxy

O, K.K., Lee, H.-S., Reif, R., Frank, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 152 KB

english, 1988

70

A novel germanium implanted salicide technology for CMOS VLSI

Pfiester, J.R., Yeargain, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 302 KB

english, 1988

71

Fabrication of SOI CMOS over large-area continuous-oxide films formed using epitaxial lateral overgrowth techniques

Dolny, G., Ipri, A., Jastrzebski, L., Flatley, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 165 KB

english, 1988

72

A novel, shallow-trench-isolated, planar, N+SAG FAMOS transistor for high-density nonvolatile memories

Esquivel, A.L., Mitchell, A.T., Huffman, C., Paterson, J.L., Tigelaar, H.L., Riemenschneider, B.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 311 KB

english, 1988

73

Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics

Wright, P.J., Moslehi, M.M., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 306 KB

english, 1988

74

Short-channel MOSFETs with superior gate dielectrics fabricated using multiple rapid thermal processing

Shih, D.K., Kwong, D.L., Lee, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 162 KB

english, 1988

75

Charge storage in the polysilicon emitter

Jalali, B., Yang, E.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 296 KB

english, 1988

76

Stacked capacitor DRAM process using photo-CVD Ta2O5 film

Yamagishi, K., Aoki, H., Ono, S., Shimizu, H., Matsui, M., Tarui, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 162 KB

english, 1988

77

Influence of MBE growth and rapid thermal annealing conditions on the electrical properties of normal and inverted AlGaAs/InGaAs pseudomorphic HEMT structures

Kesan, V.P., Dodabalapur, A., Neikirk, D.P., Streetman, B.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 148 KB

english, 1988

78

Quantum well p-channel AlGaAs/InGaAs/GaAs devices for complementary heterostructure FET applications

Ruden, P.P., Daniels, R.R., Shur, M.S., Grider, D., Nohava, T., Arch, D.K., Cirillo, N.C., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 148 KB

english, 1988

79

Fabrication and performance of 0.1-μm gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz

Lepore, A., Levy, M., Lee, H., Kohn, E., Radulescu, D., Tiberio, R., Tasker, P., Eastman, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 294 KB

english, 1988

80

An InAlAs/n+-InGaAs MISFET with a modulation-doped channel

del Alamo, J.A., Mizutani, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

81

Noise performance of submicrometer AlInAs-GaInAs HEMTs

Mishra, U.K., Brown, A.S., Rosenbaum, S.E., Delaney, M.J., Vaughn, S., White, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

82

Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures

Kolodzev, J., Adesida, I., Laskar, J., Boor, S., Reis, S., Ketterson, A., Cho, A.Y., Fischer, R., Sivco, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

83

High-performance, high-gain, submicrometer GaInAs JFETs

Riglet, P., Chane, J.P., Vingrief, J.J., Baelde, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 294 KB

english, 1988

84

DC and microwave performance of submicrometer InGaAs HIGFETs

Feuer, M.D., Tennant, D.M., Kuo, J.M., Shunk, S.C., Tell, B., Chang, T.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

85

Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

Hayes, J.R., Bhat, R., Colas, E., Esagui, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

86

Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

Morizuka, K., Katoh, R., Asaka, M., Iizuka, N., Tsuda, K., Obara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 292 KB

english, 1988

87

Hot-electron transport in a graded-bandgap base heterojunction bipolar transistor

Hayes, J.R., Harbison, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 297 KB

english, 1988

88

Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors

Tiwari, S., Frank, D.J., Wright, S.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 150 KB

english, 1988

89

High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy

Peng, C.K., Won, T., Chen, J., Litton, C., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 301 KB

english, 1988

90

Measurement of bandgap narrowing effects in p-GaAs and implications for AlGaAs/GaAs HBT performance

Klausmeier-Brown, M.E., DeMoulin, P.D., Lundstrom, M.S., Melloch, M.R., Tobin, S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 161 KB

english, 1988

91

GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology

Taylor, G.W., Crawford, D.L., Kiely, P.A., Sargood, S.K., Cooke, P., Izabelle, A., Chang, T.Y., Tell, B., Lebby, M.S., Brown-Goebeler, K., Simmons, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

92

GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings

Nichols, K.B., Mathews, R.H., Hollis, M.A., Bozler, C.O., Vera, A., Murphy, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

93

Multi-quantum well electro-optic modulator using a combination of excitonic index and absorption changes

Yan, R.H., Simes, R.J., Geels, R.S., Coldren, L.A., English, J.H., Gossard, A.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 300 KB

english, 1988

94

An array of light-intensity sensors based on flip-flops

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 161 KB

english, 1988

95

High-speed optically-addressed spatial light modulator

Li, W., Kuo, C.T., Moddel, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

96

Amorphous superlattice structure devices

Nakamura, N., Tarui, H., Matsuyama, T., Watanabe, K., Noguchi, S., Tsuda, S., Nakano, S., Kuwano, Y., Ohara, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 147 KB

english, 1988

97

p-channel amorphous silicon TFTs with high hole mobility

Oda, S., Adachi, N., Katoh, S., Matsumura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 147 KB

english, 1988

98

0.5-μm gate length self-aligned gate MODFET with reduced short-channel effects

Han, C.J., Grider, D., Newstrom, K., Joslyn, P., Fraasch, A., Arch, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

99

Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy

Kuo, T.Y., Cunningham, J.E., Schubert, E.F., Tsang, W.T., Chiu, T.H., Ren, F., Timp, G., Fonstad, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 310 KB

english, 1988

100

High-performance short-channel MESFETs with WSiN gate suppressing As-outdiffusion (SAINT-GEN.II)

Tokumitsu, M., Onodera, K., Asai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 161 KB

english, 1988

101

An asymmetrical lightly doped drain (LDD) self-aligned gate heterostructure field effect transistor

Akinwande, A.I., Vold, P.J., Grider, D.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 307 KB

english, 1988

102

A novel self-alignment technique for GaAs MESFET with asymmetric n + layer

Kimura, T., Inokuchi, K., Akiyama, M., Sakuta, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 165 KB

english, 1988

103

Dramatic reduction of sidegating in MODFETs

Lin, B.J.F., Mars, D.E., Low, T.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 159 KB

english, 1988

104

GaAlAs/GaAs floating-gate memory devices with graded-gap injector grown by molecular-beam epitaxy

Beltram, F., Capasso, F., Walker, J.F., Malik, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 159 KB

english, 1988

105

Influence of quantum well width on DC and RF device performance in pseudomorphic Al0.30Ga0.70As/In0.25Ga 0.75As MODFETs

Nguyen, L.D., Radulescu, D.C., Tasker, P.J., Foisy, M.C., Eastman, L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 302 KB

english, 1988

106

Picosecond shock-wave generation on a GaAs nonlinear transmission line

Madden, C.J., Rodwell, M.J.W., Marsland, R.A., Bloom, D.M., Pao, Y.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 161 KB

english, 1988

107

A vertically integrated resonant tunneling device with multiple negative differential resistances

Potter, R.C., Lakhani, A.A., Hier, H.S., Beyea, D., Hempfling, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 299 KB

english, 1988

108

Experimental analysis of resonant-tunneling hot-electron transistors operated at room temperature

Mori, T., Imamura, K., Ohnishi, H., Minami, Y., Muto, S., Yokoyama, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

109

Multiple-valued logic application of a triple well resonant tunneling diode

Kusano, C., Tanoue, T., Mizuta, H., Takahashi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 155 KB

english, 1988

110

Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor

Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Keramidas, V.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 300 KB

english, 1988

111

A comparative study of electroluminescence in rare earth (Er, Yb) doped InP and GaAs light-emitting diodes

Whitney, P.S., Uwai, K., Nakagome, H., Takahei, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 298 KB

english, 1988

112

Characterization of p-N Si1-xGex/Si heterojunctions grown by limited reaction processing

King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P., Rosner, S.J., Reid, G., Laderman, S., Nauka, K., Kamins, T.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 161 KB

english, 1988

113

GaAs LEDs with n-i-p-i active layers fabricated by selective contact diffusion

Ackley, D.E., Mantz, J., Lee, H., Nouri, N., Shieh, C.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 152 KB

english, 1988

114

InGaAs/InGaAsP quantum well distributed feedback laser

Miller, B.I., Koren, U., Koch, T.L., Eisenstein, G., Liou, K.Y., Tucker, R.S., Shahar, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 291 KB

english, 1988

115

14-GHz picosecond optical pulse train generation in gain-switched single-mode DFB lasers

Kamite, K., Sudo, H., Sugano, M., Sada, H., Ishikawa, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 152 KB

english, 1988

116

Optical-wavelength switching using distributed-feedback laser diodes

Kawaguchi, H., Magari, K., Yasaka, H., Fukuda, M., Oe, K., Takanashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 151 KB

english, 1988

117

Surface-emitting lasers with GaAlAs/AlAs DBR grown by OMVPE

Ibaraki, A., Kawashima, K., Ishikawa, T., Yamaguchi, T., Niina, T., Ohara, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 151 KB

english, 1988

118

Unified planar process for fabricating heterojunction bipolar transistors and buried heterostructure lasers utilizing impurity-induced disordering

Thornton, R.L., Mosby, W.J., Chung, H.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 297 KB

english, 1988

119

Device physics and optimization of conductivity-modulated power MOSFETs

Liu, D.K.Y., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 295 KB

english, 1988

120

A hybrid VIGBT-LDMOS transistor

Chow, T.P., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

121

Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

Hall, D.C., Deppe, D.G., Holonyak, N., Jr., Matyi, R.J., Shichijo, H., Epler, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

122

Bidirectional lateral insulated gate transistors operated in controlled latchup mode

Huang, J.S.T., Kueng, J.S., Green, P.W., Holt, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 152 KB

english, 1988

123

The MOS-depletion-mode-thyristor: a new MOS controlled bipolar power device

Baliga, B.J., Chang, H.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 152 KB

english, 1988

124

Numerical and experimental comparison of vertical DMOSFET and UMOSFET

Chang, H.-R., Temple, V.A.K., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 216 KB

english, 1988

125

TDMOS-an ultra-low on-resistance power transistor

Mukherjee, S., Kim, M., Tsou, L., Simpson, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 158 KB

english, 1988

126

Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology

Shenai, K., Piacente, P.A., Saia, R., Korman, C.S., Tantraporn, W., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 158 KB

english, 1988