Gate-induced drain leakage current enhanced by plasma...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 5

Gate-induced drain leakage current enhanced by plasma charging damage

Siguang Ma, Yaohui Zhang, Li, M.F., Weidan Li, Joseph Xie, Sheng, G.T.T., Yen, A.C., Wang, J.L.F.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
48
Year:
2001
Language:
english
Pages:
3
DOI:
10.1109/16.918252
File:
PDF, 90 KB
english, 2001
Conversion to is in progress
Conversion to is failed