Volume 48; Issue 5

IEEE Transactions on Electron Devices

Volume 48; Issue 5

1

A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns

Algora, C., Ortiz, E., Rey-Stolle, I., Diaz, V., Pena, R., Andreev, V.M., Khvostikov, V.P., Rumyantsev, V.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 121 KB

english, 2001

2

Schottky barrier depletion modification-a source of output conductance in submicron GaAs MESFETs

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

3

Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs

Chung, T., Bank, S.R., Epple, J., Kuang-Chien Hsieh

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 92 KB

english, 2001

4

Polysilicon TFT technology for active matrix OLED displays

Stewart, M., Howell, R.S., Pires, L., Hatalis, M.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 133 KB

english, 2001

5

Optical characteristics of silicon semiconductor bridges under high current density conditions

Jongdae Kim, Tae Moon Roh, Kyoung-Ik Cho, Jungling, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

6

Charge transfer in a multi-implant pinned-buried photodetector

Janval, R.K., Misra, D., Lowrance, J.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 130 KB

english, 2001

7

Bipolar transistor selected P-channel flash memory cell technology

Ohnakado, T., Ajika, N., Satoh, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 121 KB

english, 2001

8

Excess currents induced by hot hole injection and FN electron injection in thin SiO2 films

Teramoto, A., Kobayashi, K., Ohno, Y., Shigetomi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 139 KB

english, 2001

9

Characteristics of p-channel Si nano-crystal memory

Kwangseok Han, Ilgweon Kim, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 157 KB

english, 2001

10

Sub-50 nm P-channel FinFET

Xuejue Huang, Wen-Chin Lee, Kuo, C., Hisamoto, D., Leland Chang, Kedzierski, J., Anderson, E., Takeuchi, H., Yang-Kyu Choi, Asano, K., Subramanian, V., Tsu-Jae King, Bokor, J., Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 166 KB

english, 2001

11

Unified MOSFET compact I-V model formulation through physics-based effective transformation

Xing Zhou, Khee Yong Lim

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 292 KB

english, 2001

12

Vertical N-channel MOSFETs for extremely high density memories: the impact of interface orientation on device performance

Goebel, B., Schumann, D., Bertagnolli, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 234 KB

english, 2001

13

Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH3 nitridation and N2O RTA treatment

Tung Ming Pan, Tan Fu Lei, Huang Chun Wen, Tien Sheng Chao

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

14

Analysis of the DCIV peaks in electrically stressed pMOSFETs

Bin Bin Jie, Chim, W.K., Ming-Fu Li, Lo, K.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

15

1/f noise in CMOS transistors for analog applications

Nemirovsky, Y., Brouk, I., Jakobson, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 212 KB

english, 2001

16

Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

Lurng Shehng Lee, Chungpin Liao, Chung-Len Lee, Tzuen-His Huang, Denny Duan-Lee Tang, Ting Shien Duh, Tsing-Tyan Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 202 KB

english, 2001

17

A new model of gate capacitance as a simple tool to extract MOS parameters

Larcher, L., Pavan, P., Pellizzer, F., Ghidini, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 270 KB

english, 2001

18

Semiconductor transport simulation with the local iterative Monte Carlo technique

Jakumeit, J., Ravaioli, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

19

Low-frequency noise in TFSOI lateral n-p-n bipolar transistors

Babcock, J.A., Schroder, D.K., Huang, W.-L.M., Ford, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 238 KB

english, 2001

20

A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation

Bonani, F., Guerrieri, S.D., Ghione, G., Pirola, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 276 KB

english, 2001

21

On a dual-polarity on-chip electrostatic discharge protection structure

Wang, A.Z.H., Chen-Hui Tsay

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 156 KB

english, 2001

22

Analysis of the stochastic error of stationary Monte Carlo device simulations

Jungemann, C., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 156 KB

english, 2001

23

Self-consistent simulation of the spatial-harmonic magnetron with cold secondary-emission cathode

Schunemann, K., Sosnytskiy, S.V., Vavriv, D.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 168 KB

english, 2001

24

Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

Namkyu Park, O, K.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

25

Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment

Seah, S.H.L., Kiat Seng Yeo, Jian Guo Fia, Manh Anh Do

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 126 KB

english, 2001

26

Patterning sub-30-nm MOSFET gate with i-line lithography

Asano, K., Yang-Kyu Choi, Tsu-Jae King, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 84 KB

english, 2001

27

Gate-induced drain leakage current enhanced by plasma charging damage

Siguang Ma, Yaohui Zhang, Li, M.F., Weidan Li, Joseph Xie, Sheng, G.T.T., Yen, A.C., Wang, J.L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

28

A novel two-step laser crystallization technique for low-temperature poly-Si TFTs

Xiangbin Zeng, Zhongyang Xu, Sin, J.K.O., Yongbin Dai, Changan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 62 KB

english, 2001

29

Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Hao Guan, Byung Jin Cho, Li, M.E., Zhen Xu, He, Y.D., Zhong Dong

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 118 KB

english, 2001

30

CMOS compatible HV gate-shifted LDD-NMOS

Santos, P.M., Casimiro, A.P., Lanca, M., Simas, M.I.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

31

Reliability of thin oxides grown on deuterium implanted silicon substrate

Misra, D., Jarwal, R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 52 KB

english, 2001

32

The nonvolatile cell hidden in standard CMOS logic technologies

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 70 KB

english, 2001

33

A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

Benson, J., D'Halleweyn, N.V., Redman-White, W., Easson, C.A., Uren, M.J., Faynot, O., Pelloie, J.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 73 KB

english, 2001

34

Changes in the editorial board

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 14 KB

english, 2001

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