A physically based relation between extracted threshold...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 5

A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

Benson, J., D'Halleweyn, N.V., Redman-White, W., Easson, C.A., Uren, M.J., Faynot, O., Pelloie, J.-L.
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Volume:
48
Year:
2001
Language:
english
Pages:
3
DOI:
10.1109/16.918258
File:
PDF, 73 KB
english, 2001
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