Breakdown quenching in high electron mobility transistor by...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 10

Breakdown quenching in high electron mobility transistor by using body contact

Sleiman, A., Di Carlo, A., Lugli, P., Zandler, G.
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Volume:
48
Year:
2001
Language:
english
Pages:
4
DOI:
10.1109/16.954452
File:
PDF, 129 KB
english, 2001
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