Volume 48; Issue 10

IEEE Transactions on Electron Devices

Volume 48; Issue 10

1

Analysis of a technology for CZ bifacial solar cells

del Canizo, C., Moehlecke, A., Zanesco, I., Tobias, I., Luque, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 141 KB

english, 2001

2

A methodology for deep sub-0.25 μm CMOS technology prediction

Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

3

Breakdown quenching in high electron mobility transistor by using body contact

Sleiman, A., Di Carlo, A., Lugli, P., Zandler, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

4

DC and microwave noise transient behavior of InP/InGaAs double heterojunction bipolar transistor (DHBT) with polyimide passivation

Yong Zhong Xiong, Geok-Ing Ng, Hong Wang, Fu, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 132 KB

english, 2001

5

Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

Ng, B.K., David, J.P.R., Plimmer, S.A., Rees, G.J., Tozer, R.C., Hopkinson, M., Hill, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 164 KB

english, 2001

6

Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures

Ching-Hsi Lin, Hwu, R.J., Sadwick, L.P., Dongho Heo

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

7

AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures

Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

8

Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT

Jungemann, C., Neinhus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 84 KB

english, 2001

9

High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

Furumiya, M., Ohkubo, H., Muramatsu, Y., Kurosawa, S., Okamoto, F., Fujimoto, Y., Nakashiba, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 185 KB

english, 2001

10

Design and performance of a vertical cavity surface emitting laser based on III-V quaternary semiconductor alloys for operation at 1.55 μm

Linnik, M., Christou, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

11

Impactron-a new solid state image intensifier

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 164 KB

english, 2001

12

Modeling of electron transport and luminance in SrS:Cu,Ag ACTFEL display devices

Singh, V.P., Aguilera, A., Garcia, A., Morton, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 124 KB

english, 2001

13

Light-soaking effects on a-Si:H photodiodes deposited by the laminar-flow photo-CVD method

Ichinose, H., Nozaki, H., Miyagawa, R., Yamaguchi, T., Furukawa, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 109 KB

english, 2001

14

A study on the new type sustaining electrode showing high luminous efficiency in AC PDPs

Chung-Hoo Park, Sung-Hyun Lee, Dong-Hyun Kim, Young-Kee Kim, Joong-Hong Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 233 KB

english, 2001

15

Improvement of addressing time and its dispersion in AC plasma display panel

Chung-Hoo Park, Sung-Hyun Lee, Dong-Hyun Kim, Woo-Geun Lee, Jeong-Eun Heo

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 284 KB

english, 2001

16

Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)

Inoue, N., Hayashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

17

A novel semiconductor capacitive sensor for a single-chip fingerprint sensor/identifier LSI

Machida, K., Shigematsu, S., Morimura, H., Tanabe, Y., Sato, N., Shimoyama, N., Kumazaki, T., Kudou, K., Yano, M., Kyuragi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 208 KB

english, 2001

18

Analytic models of drain, substrate and gate current distributions in the drain section of MOSFETs

Yu-Sheng Tang, Yue Hao, Ming-Yu Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 451 KB

english, 2001

19

A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with Halos or pockets

van Meer, H., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 329 KB

english, 2001

20

Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV

Melik-Martirosian, A., Tso-Ping Ma

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

21

Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors

In-Ho Nam, Jae Sung Sim, Sung In Hong, Byung-Gook Park, Jong Duk Lee, Seung-Woo Lee, Man-Sug Kang, Young-Wug Kim, Kwang-Pyuk Suh, Won Seong Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 181 KB

english, 2001

22

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Ting-Kuo Kang, Ming-Jer Chen, Chuan-Hsi Liu, Chang, Y.J., Shou-Kong Fan

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

23

Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs

Mietzner, T., Jakumeit, J., Ravaioli, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 187 KB

english, 2001

24

Investigation of defects in deposited oxides with a frequency resolved capacitance technique

Caputo, D., Irrera, F., Palma, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 138 KB

english, 2001

25

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Tiezhong Ma, Campbell, S.A., Smith, R., Hoilien, N., Boyong He, Gladfelter, W.L., Hobbs, C., Buchanan, D., Taylor, C., Gribelyuk, M., Tiner, M., Coppel, M., Jang Jung Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 207 KB

english, 2001

26

Optimum halo structure for sub-0.1 μm CMOSFETs

Wen-Kuan Yeh, Jih-Wen Chou

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 118 KB

english, 2001

27

A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

Wakabayashi, H., Saito, Y., Takeuchi, K., Mogami, T., Kunio, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 169 KB

english, 2001

28

Reliability of low temperature poly-silicon TFTs under inverter operation

Uraoka, Y., Hatayama, T., Fuyuki, T., Kawamura, T., Tsuchihashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

29

Electrical instability of low-dielectric constant diffusion barrier film (a-SiC:H) for copper interconnect

Bing-Yue Tsui, Kuo-Lung Fang, Shyh-Dar Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

30

Intrinsic MOSFET capacitance coefficients

Gummel, H.K., Singhal, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 268 KB

english, 2001

31

Partial filling of a quantum dot intermediate band for solar cells

Marti, A., Cuadra, L., Luque, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

32

Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Bong-Hung Leung, Wai-Keung Fong, Chang-Fei Zhu, Surya, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

33

Modeling of oxidation-induced strain and its effect on the electronic properties of Si waveguides

Boxberg, F., Tulkki, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 214 KB

english, 2001

34

Back-gate and series resistance effects in LDMOSFETs on SOI

Vandooren, A., Cristoloveanu, S., Mojarradi, M., Kolawa, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 154 KB

english, 2001

35

New SiGe bipolar transistors and p-i-n diodes for power switching

Hirose, F., Souda, Y., Nakano, K., Goya, S., Nishimori, T., Okumura, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

36

Physics and applications of the Schottky junction transistor

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 187 KB

english, 2001

37

A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

Yue Tan, Kumar, M., Jun Cai, Sin, J.K.O.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 193 KB

english, 2001

38

Experimental study of phase deviation and pushing in a frequency doubling, second harmonic gyro-amplifier

Rodgers, J., Guo, H., Nusinovich, G.S., Granatstein, V.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 179 KB

english, 2001

39

Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Sanghoon Jeon, Hyun-Min Park, Songcheol Hong

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

40

Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n+-p-well diodes

Poyai, A., Simoen, E., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 75 KB

english, 2001

41

Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo, P., Godoy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

42

Physical modeling of the reverse-short-channel effect for circuit simulation

Miura-Mattausch, M., Suetake, M., Mattausch, H.J., Kumashiro, S., Shigyo, N., Odanaka, S., Nakayama, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

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