Group IVB metal oxides high permittivity gate insulators...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 10

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Tiezhong Ma, Campbell, S.A., Smith, R., Hoilien, N., Boyong He, Gladfelter, W.L., Hobbs, C., Buchanan, D., Taylor, C., Gribelyuk, M., Tiner, M., Coppel, M., Jang Jung Lee
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Volume:
48
Year:
2001
Language:
english
Pages:
9
DOI:
10.1109/16.954476
File:
PDF, 207 KB
english, 2001
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