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Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
Tiezhong Ma, Campbell, S.A., Smith, R., Hoilien, N., Boyong He, Gladfelter, W.L., Hobbs, C., Buchanan, D., Taylor, C., Gribelyuk, M., Tiner, M., Coppel, M., Jang Jung LeeVolume:
48
Year:
2001
Language:
english
Pages:
9
DOI:
10.1109/16.954476
File:
PDF, 207 KB
english, 2001