A dual-metal gate CMOS technology using...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 10

A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

Wakabayashi, H., Saito, Y., Takeuchi, K., Mogami, T., Kunio, T.
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Volume:
48
Year:
2001
Language:
english
Pages:
7
DOI:
10.1109/16.954478
File:
PDF, 169 KB
english, 2001
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