Planar Be-implanted GaAs junction formation using...

IEEE Transactions on Electron Devices 1983 Vol. 30; Iss. 12

Planar Be-implanted GaAs junction formation using swept-line electron beam annealing

Banerjee, S.K., DeJule, R.Y., Soda, K.J., Streetman, B.G.
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Volume:
30
Year:
1983
Language:
english
Pages:
6
DOI:
10.1109/t-ed.1983.21441
File:
PDF, 706 KB
english, 1983
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