Volume 30; Issue 12

IEEE Transactions on Electron Devices

Volume 30; Issue 12

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 283 KB

english, 1983

2

Barrier-limited transport in semiconductor devices

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 541 KB

english, 1983

3

An analytic model for the barrier-limited mode of operation of the permeable base transistor

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 504 KB

english, 1983

4

Semi-empirical equations for electron velocity in silicon: Part I—Bulk

Schwarz, S.A., Russek, S.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 552 KB

english, 1983

5

Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer

Schwarz, S.A., Russek, S.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 645 KB

english, 1983

6

Performance comparison of highly integrated circuits: Silicon NMOS versus gallium arsenide normally-off MESFET technology

Gesch, H., Kellner, W., Kniepkamp, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 862 KB

english, 1983

7

DC holding and dynamic triggering characteristics of bulk CMOS latchup

Rung, R.D., Momose, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 948 KB

english, 1983

8

Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide

Omura, Y., Nakashima, S., Izumi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 663 KB

english, 1983

9

Determination of the spatial variation of interface trapped charge using short-channel MOSFET's

Russell, T.J., Wilson, C.L., Gaitan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.14 MB

english, 1983

10

Analysis of the narrow gate effect in submicrometer MOSFET's

Chao-Ren Ji, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 645 KB

english, 1983

11

Behavior of holes generated by impact ionization in n-channel MOSFET's

Kotani, N., Kawazu, S., Komori, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 327 KB

english, 1983

12

Shallow p-wells for fine dimension CMOS circuits

Lewis, A.G., Partridge, S.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.57 MB

english, 1983

13

The performance of submicrometer gate length GaAs MESFET's

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 684 KB

english, 1983

14

A low-frequency noise analysis using the two-dimensional numerical analysis method

Sano, E., Tsukahara, T., Kimura, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 588 KB

english, 1983

15

Some closed-form expressions for relativistic cross-field electron trajectories

Vaughan, J.R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 634 KB

english, 1983

16

On the current-voltage characteristics of n+-p-p+diodes

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 677 KB

english, 1983

17

The MISIM-FET in thin semiconductor layers: Depletion-approximation model of I-V characteristics

Barth, P.W., Apte, P.R., Angell, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.10 MB

english, 1983

18

Approximated analytical model for dark and Jsc—Voccharacteristics of p+-i-n+solar cells

Araujo, G.L., Castano, J., Luque, A., Sanchez, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 984 KB

english, 1983

19

Optimum composition of CaO, SrO dielectric materials in AC plasma display panels

Uchiike, H., Sekiya, K., Hashimoto, T., Shinoda, T., Fukushima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 869 KB

english, 1983

20

New modeling of GaAs MESFET's

Hariu, T., Takahashi, K., Shibata, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 671 KB

english, 1983

21

Transient electronic transport in InP under the condition of high-energy electron injection

Brennan, K., Hess, K., Tang, J.Y.-F., Iafrate, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 535 KB

english, 1983

22

Planar Be-implanted GaAs junction formation using swept-line electron beam annealing

Banerjee, S.K., DeJule, R.Y., Soda, K.J., Streetman, B.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 706 KB

english, 1983

23

An analytic model for the MIS tunnel junction

Tarr, N.G., Pulfrey, D.L., Camporese, D.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.26 MB

english, 1983

24

Effect of illumination wavelength and intensity on minority-carrier diffusion length of EFG silicon ribbon solar cells

Shimokawa, R., Hayashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 771 KB

english, 1983

25

A novel quadrilinear CCD for high resolution line arrays

Sevenhans, J., Bosiers, J., Laes, E., Declerck, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 446 KB

english, 1983

26

Optimization of the composition of a new MRS-type negative resist

Matsuzawa, T., Kishimoto, A., Iwayanagi, T., Yanazawa, H., Obayashi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 768 KB

english, 1983

27

An advanced SVG technology for 64K junction-shorting PROM's

Fukushima, T., Ueno, K., Tanaka, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.21 MB

english, 1983

28

Conductivity in polycrystalline silicon—physics and rigorous numerical treatment

Peisl, M., Wieder, A.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 696 KB

english, 1983

29

Suppression of spurious modes in high-power traveling-wave tubes

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 797 KB

english, 1983

30

Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

Drummond, T.J., Fischer, R.J., Kopp, W.F., Morkoc, H., Kwyro Lee, Shur, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 737 KB

english, 1983

31

Design optimization study for a 960 × 768 line AC plasma display panel

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 823 KB

english, 1983

32

Large-signal modeling of GaAs MESFET operation

Snowden, C.M., Howes, M.J., Morgan, D.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 936 KB

english, 1983

33

The operation of power MOSFET in reverse mode

Min-hwa Chi, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 457 KB

english, 1983

34

Profile estimation of high-concentration arsenic or boron diffusion in silicon

Way-Seen Wang, Yu-Hwa Lo

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 422 KB

english, 1983

35

Neutron radiation tolerance of field-controlled thyristors

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 355 KB

english, 1983

36

Analysis of the photocurrent decay (PCD) method for measuring minority-carrier lifetime in solar cells

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 429 KB

english, 1983

37

An analytical model for the gate capacitance of small-geometry MOS structures

Greeneich, E.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 194 KB

english, 1983

38

A stable ytterbium-insulator-semiconductor solar cell based on an interface degradation model

Rajeswaran, G., Rao, V.J., Jackson, M.A., Thayer, M., Anderson, W.A., Rao, B.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 334 KB

english, 1983

39

Foreword

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 114 KB

english, 1983

40

Profile studies of ion-implanted MESFET's

Golio, J.M.M., Trew, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 560 KB

english, 1983

41

Low-noise MESFET's for ion-implanted GaAs MMIC's

Gupta, A.K., Siu, D.P., Ip, K.T., Petersen, W.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 581 KB

english, 1983

42

A Ka-band GaAs monolithic phase shifter

Sokolov, V., Geddes, J.J., Contolatis, A., Bauhahn, P.E., Chente Chao

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 894 KB

english, 1983

43

12-GHz-band low-noise GaAs monolithic amplifiers

Sugiura, T., Itoh, H., Tsuji, T., Honjo, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 669 KB

english, 1983

44

GaAs monolithic MIC's for direct broadcast satellite receivers

Hori, S., Kamei, K., Shibata, K., Tatematsu, M., Mishima, K., Okano, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.02 MB

english, 1983

45

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 5.25 MB

english, 1983

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