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Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs
Jonghwan Lee, Bosman, G., Green, K.R., Ladwig, D.Volume:
49
Year:
2002
Language:
english
Pages:
10
DOI:
10.1109/ted.2002.1013281
File:
PDF, 406 KB
english, 2002