Volume 49; Issue 7

IEEE Transactions on Electron Devices

Volume 49; Issue 7

1

Changes to the editorial board

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 150 KB

english, 2002

2

Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

Nishizawa, J., Plotka, P., Kurabayashi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 436 KB

english, 2002

3

Calculation of gain and noise with dead space for GaAs and Alx Ga1-xAs avalanche photodiode

Xiaowei Li, Xiaoguang Zheng, Shuling Wang, Feng Ma, Campbell, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

4

Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon

Earles, S., Law, M., Brindos, R., Jones, K., Talwar, S., Corcoran, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 266 KB

english, 2002

5

CMOS photodiode with enhanced responsivity for the UV/blue spectral range

Ghazi, A., Zimmermann, H., Seegebrecht, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

6

1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

Po-Hsun Lei, Chia-Chien Lin, Wen-Jeng Ho, Meng-Chyi Wu, Lih-Wen Laih

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

7

Integration and characterization of amorphous silicon thin-film transistor and Mo-tips for active-matrix cathodes

Do-Hyung Kim, Yoon-Ho Song, Young-Rae Cho, Chi-Sun Hwang, Bong-Chul Kim, Seong-Deok Ahn, Choong-Heui Chung, Hyun-Seok Uhm, Jin Ho Lee, Kyung-Ik Cho, Sang-Yun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 332 KB

english, 2002

8

A new driving waveform to improve dark room contrast ratio in ac plasma display panel

Chung-Hoo Park, Sung-Hyun Lee, Dong-Hyun Kim, Jae-Hwa Ryu, Ho-Jun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 454 KB

english, 2002

9

Plasma-charging effects on submicron MOS devices

Pei-Jer Tzeng, Chang, Y.-Y.I., Chun-Chen Yeh, Chih-Chiang Chen, Chien-Hung Liu, Mu-Yi Liu, Bone-Fong Wu, Kuei-Shu Chang-Liao

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 298 KB

english, 2002

10

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

Hongyu Yu, Yong-Tian Hou, Ming-Fu Li, Dim-Lee Kwong

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 302 KB

english, 2002

11

Recoiled-oxygen-free processing for 1.5 nm SiON gate-dielectric in sub-100-nm CMOS technology

Togo, M., Kimura, S., Mogami, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 276 KB

english, 2002

12

Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

Di Li, Shrivastav, G., Geng Wang, Yang Chen, Li Lin, Oak, S., Tasch, A., Banerjee, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 474 KB

english, 2002

13

A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon

Mokhberi, A., Griffin, P.B., Plummer, J.D., Paton, E., McCoy, S., Elliott, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 314 KB

english, 2002

14

Suppression of stress-induced leakage current after Fowler-Nordheim stressing by deuterium pyrogenic oxidation and deuterated poly-Si deposition

Mitani, Y., Satake, H., Itoh, H., Toriumi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 247 KB

english, 2002

15

Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs

Munteanu, D., Ionescu, A.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 355 KB

english, 2002

16

MOS varactor modeling with a subcircuit utilizing the BSIM3v3 model

Molnar, K., Rappitsch, G., Huszka, Z., Seebacher, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

17

Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

Knoch, J., Lengeler, B., Appenzeller, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 339 KB

english, 2002

18

Series resistance calculation for source/drain extension regions using 2-D device simulation

Kwong, M.Y., Chang-Hoon Choi, Kasnavi, R., Griffin, P., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 706 KB

english, 2002

19

Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS

Chang-Hoon Choi, Chidambaram, P.R., Khamankar, R., Machala, C.F., Zhiping Yu, Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 389 KB

english, 2002

20

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Jonghwan Lee, Bosman, G., Green, K.R., Ladwig, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 406 KB

english, 2002

21

A drift-diffusion/Monte Carlo simulation methodology for Si1-x Gex HBT design

Palestri, P., Mastrapasqua, M., Pacelli, A., King, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 298 KB

english, 2002

22

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory

Jungemann, C., Neinhus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

23

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Jungemann, C., Neinhus, B., Decker, S., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 273 KB

english, 2002

24

An explicit expression for surface potential at high-end of moderate inversion

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 385 KB

english, 2002

25

A new look at the antenna effect

Verret, D.P., Krishnan, A., Krishnan, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 306 KB

english, 2002

26

Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

Anil, K.G., Mahapatra, S., Eisele, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 306 KB

english, 2002

27

SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C

Dessard, V., Iniguez, B., Adriaensen, S., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 406 KB

english, 2002

28

CHISEL flash EEPROM. I. Performance and scaling

Mahapatra, S., Shukuri, S., Bude, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 278 KB

english, 2002

29

CHISEL flash EEPROM. II. Reliability

Mahapatra, S., Shukuri, S., Bude, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 268 KB

english, 2002

30

Scaling of microwave noise and small-signal parameters of InP/InGaAs DHBT with high DC current gain

Yong Zhong Xiong, Geok-Ing Ng, Hong Wang, Choi Look Law, Radhakrishnan, K., Fu, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 270 KB

english, 2002

31

Estimating lateral straggling of indium implanted into crystalline silicon

Suzuki, K., Sudo, R., Tashiro, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 254 KB

english, 2002

32

An analytical model for flat-band polysilicon quantization in MOS devices

Spinelli, A.S., Clerc, R., Ghibaudo, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 229 KB

english, 2002

33

A new low-loss lateral trench sidewall Schottky (LTSS) rectifier on SOI with high and sharp breakdown voltage

Jagadesh Kumar, M., Singh, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 260 KB

english, 2002

34

Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization

Kook Chul Moon, Jae-Hoon Lee, Min-Koo Han

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 240 KB

english, 2002

35

Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Jin He, Xuemei Xi, Mansun Chan, Chenming Hu, Yingxue Li, Xing Zhang, Ru Huang, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 234 KB

english, 2002

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