SiC-GTO thyristor gate and drift-region dopant polarity...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 11

SiC-GTO thyristor gate and drift-region dopant polarity analysis using electrothermal simulation

Shah, P.B.
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Volume:
49
Year:
2002
Language:
english
Pages:
6
DOI:
10.1109/ted.2002.804691
File:
PDF, 461 KB
english, 2002
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