Volume 49; Issue 11

IEEE Transactions on Electron Devices

Volume 49; Issue 11

1

High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

Dong-Soo Yoon, Jae Sung Roh

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 2.05 MB

english, 2002

2

High-performance polymer tfts printed on a plastic substrate

Sung Kyu Park, Yong Hoon Kim, Jeong In Han, Dae Gyu Moon, Won Keun Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.13 MB

english, 2002

3

SiC-GTO thyristor gate and drift-region dopant polarity analysis using electrothermal simulation

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 461 KB

english, 2002

4

Improving the electrical integrity of Cu-CoSi2 contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Wen Luh Yang, Wen-Fa Wu, Hsin Chiang You, Keng-Liang Ou, Tan Fu Lei, Chang-Pin Chou

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.00 MB

english, 2002

5

Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

Togo, M., Watanabe, K., Yamamoto, T., Ikarashi, N., Tatsumi, T., Ono, H., Mogami, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 499 KB

english, 2002

6

A computational study of thin-body, double-gate, Schottky barrier MOSFETs

Jing Guo, Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 524 KB

english, 2002

7

Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping

Xiangdong Chen, Ouyang, Q.C., Geng Wang, Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 643 KB

english, 2002

8

A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs

Mertens, S.D., del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 920 KB

english, 2002

9

Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

Saxena, M., Haldar, S., Gupta, M., Gupta, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 633 KB

english, 2002

10

Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

Ming Wu, Xiang-Zheng Bo, Sturm, J.C., Wagner, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 890 KB

english, 2002

11

Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

Poh Chin Phua, Ong, V.K.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 776 KB

english, 2002

12

A study of stress-induced p+/n salicided junction leakage failure and optimized process conditions for sub-0.15-μm CMOS technology

Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.46 MB

english, 2002

13

Maximum allowable bulk defect density for generation-recombination noise-free device operation

Fan-Chi Hou, Bosman, G., Law, M.E.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 246 KB

english, 2002

14

A power-optimal repeater insertion methodology for global interconnects in nanometer designs

Banerjee, K., Mehrotra, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 481 KB

english, 2002

15

Damascene W/TiN gate MOSFETs with improved performance for 0.1-μm regime

Ruizhao Li, Qiuxia Xu

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 778 KB

english, 2002

16

Anomalous phosphorous diffusion

Suzuki, K., Tashiro, H., Tada, Y., Kataoka, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 339 KB

english, 2002

17

Two types of neutral electron traps generated in the gate silicon dioxide

Wei Dong Zhang, Zhang, J.F., Lalor, A., Burton, D., Groeseneken, G.V., Degraeve, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 480 KB

english, 2002

18

Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices

Tahui Wang, Nian-Kai Zous, Chih-Chieh Yeh

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 507 KB

english, 2002

19

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO2 n-channel MOS capacitor

Yang-Yu Fan, Nieh, R.E., Lee, J.C., Lucovsky, G., Brown, G.A., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 510 KB

english, 2002

20

Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

Sang-Gi Lee, Jeong-Mo Hwang, Hi-Deok Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 531 KB

english, 2002

21

High-power 4H-SiC JBS rectifiers

Singh, R., Capell, D.C., Hefner, A.R., Lai, J., Palmour, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 896 KB

english, 2002

22

A simple method for measuring the cell gap of a reflective twisted nematic LCD

Xinyu Zhu, Wing-Kit Choi, Shin-Tson Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 391 KB

english, 2002

23

DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

Dosev, D., Ytterdal, T., Pallares, J., Marsal, L.F., Iniguez, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 482 KB

english, 2002

24

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Iiyama, K., Kita, Y., Ohta, Y., Nasuno, M., Takamiya, S., Higashimine, K., Ohtsuka, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 610 KB

english, 2002

25

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

Pogany, D., Bychikhin, S., Furbock, C., Litzenberger, M., Gornik, E., Groos, G., Esmark, K., Stecher, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 617 KB

english, 2002

26

Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

Larcher, L., Verzellesi, G., Pavan, P., Lusky, E., Bloom, I., Eitan, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 654 KB

english, 2002

27

Closed-form breakdown voltage model for PD SOI NMOS devices considering impact ionization of both parasitic BJT and surface MOS channel simultaneously

Shih-Chia Lin, Kuo, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 633 KB

english, 2002

28

A statistical model for SILC in flash memories

Ielmini, D., Spinelli, A.S., Lacaita, A.L., Modelli, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 484 KB

english, 2002

29

Ideal efficiency and potential of solar thermophotonic converters under optically and thermally concentrated power flux

Tobias, I., Luque, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 436 KB

english, 2002

30

A no-snapback LDMOSFET with automotive ESD endurance

Kawamoto, K., Takahashi, S., Fujino, S., Shirakawa, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 572 KB

english, 2002

31

Impact of lateral source/drain abruptness on device performance

Kwong, M.Y., Kasnavi, R., Griffin, P., Plummer, J.D., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 637 KB

english, 2002

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