Improving the electrical integrity of Cu-CoSi2 contacted...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 11

Improving the electrical integrity of Cu-CoSi2 contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Wen Luh Yang, Wen-Fa Wu, Hsin Chiang You, Keng-Liang Ou, Tan Fu Lei, Chang-Pin Chou
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Volume:
49
Year:
2002
Language:
english
Pages:
8
DOI:
10.1109/ted.2002.804692
File:
PDF, 1.00 MB
english, 2002
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