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Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen
Togo, M., Watanabe, K., Yamamoto, T., Ikarashi, N., Tatsumi, T., Ono, H., Mogami, T.Volume:
49
Year:
2002
Language:
english
Pages:
7
DOI:
10.1109/ted.2002.804695
File:
PDF, 499 KB
english, 2002