Physics-based analytical modeling of potential and...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 11

Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

Saxena, M., Haldar, S., Gupta, M., Gupta, R.S.
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Volume:
49
Year:
2002
Language:
english
Pages:
11
DOI:
10.1109/ted.2002.804701
File:
PDF, 633 KB
english, 2002
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