A study of stress-induced p+/n salicided junction leakage...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 11

A study of stress-induced p+/n salicided junction leakage failure and optimized process conditions for sub-0.15-μm CMOS technology

Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee
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Volume:
49
Year:
2002
Language:
english
Pages:
8
DOI:
10.1109/ted.2002.804704
File:
PDF, 1.46 MB
english, 2002
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