Fabrication of GaAs MISFET with nm-thin oxidized layer...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 11

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Iiyama, K., Kita, Y., Ohta, Y., Nasuno, M., Takamiya, S., Higashimine, K., Ohtsuka, N.
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Volume:
49
Year:
2002
Language:
english
Pages:
7
DOI:
10.1109/ted.2002.804720
File:
PDF, 610 KB
english, 2002
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