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Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide
Dong-Won Kim, Prins, F.E., Taehoon Kim, Sungbo Hwang, Lee, C.H., Dim-Lee Kwong, Banerjee, S.K.Volume:
50
Year:
2003
Language:
english
Pages:
4
DOI:
10.1109/ted.2002.804722
File:
PDF, 403 KB
english, 2003