Volume 50; Issue 2

IEEE Transactions on Electron Devices

Volume 50; Issue 2

1

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide

Dong-Won Kim, Prins, F.E., Taehoon Kim, Sungbo Hwang, Lee, C.H., Dim-Lee Kwong, Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 403 KB

english, 2003

2

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing

Jongdae Kim, Tae Moon Roh, Sang-Gi Kim, Il-Yong Park, Bun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 639 KB

english, 2003

3

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing

Onishi, K., Chang Seok Kang, Rino Choi, Hag-Ju Cho, Gopalan, S., Nieh, R.E., Krishnan, S.A., Lee, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 629 KB

english, 2003

4

A low-cost uncooled infrared microbolometer detector in standard CMOS technology

Tezcan, D.S., Eminoglu, S., Akin, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 1.19 MB

english, 2003

5

Monte Carlo simulation and measurement of nanoscale n-MOSFETs

Bufler, F.M., Asahi, Y., Yoshimura, H., Zechner, C., Schenk, A., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 366 KB

english, 2003

6

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

Inokawa, H., Fujiwara, A., Takahashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 660 KB

english, 2003

7

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

Domeij, M., Lutz, J., Silber, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 658 KB

english, 2003

8

Self-erasing discharge mode for improvement of luminous efficiency in AC plasma display panel

Heung-Sik Tae, Byung-Gwon Cho, Sung-Il Chien

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 338 KB

english, 2003

9

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation

Ming-Kwen Tsai, Shih-Wei Tan, Yen-Wei Wu, Ying-Jay Yang, Wen-Shiung Lour

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 754 KB

english, 2003

10

Operating principles and performance of a novel a-Si:H p-i-n-based X-ray detector for medical image applications

Sen-Shyong Fann, Yeu-Long Jiang, Huey-Liang Hwang

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 410 KB

english, 2003

11

Threshold voltage-related soft error degradation in a TFT SRAM cell

Ikeda, S., Yoshida, Y., Kamohara, S., Imato, K., Ishibashi, K., Takahashi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 498 KB

english, 2003

12

Effects of uniaxial mechanical stress on drive current of 0.13 μm MOSFETs

Wang, Y.G., Scott, D.B., Wu, J., Waller, J.L., Hu, J., Liu, K., Ukraintsev, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 355 KB

english, 2003

13

Development of high-current 4H-SiC ACCUFET

Singh, R., Capell, D.C., Das, M.K., Lipkin, L.A., Palmour, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 855 KB

english, 2003

14

An analysis of small-signal gate-drain resistance effect on RF power MOSFETs

Yo-Sheng Lin, Shey-Shi Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 424 KB

english, 2003

15

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model

Tsung-Hsing Yu, Brennan, K.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 536 KB

english, 2003

16

A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors

Anwar, A.F.M., Jahan, M.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 548 KB

english, 2003

17

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton, P.J., Ng, B.K., Plimmer, S.A., David, J.P.R., Rees, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 305 KB

english, 2003

18

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Chang, S.J., Wu, L.W., Su, Y.K., Kuo, C.H., Lai, W.C., Hsu, Y.P., Sheu, J.K., Chen, J.F., Tsai, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 354 KB

english, 2003

19

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors

Ravi, M.R., DasGupta, A., DasGupta, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 324 KB

english, 2003

20

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

Nieh, R.E., Chang Seok Kang, Hag-Ju Cho, Onishi, K., Rino Choi, Krishnan, S., Jeong Hee Han, Young-Hee Kim, Akbar, M.S., Lee, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 561 KB

english, 2003

21

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

Bufler, F.M., Fichtner, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 326 KB

english, 2003

22

A compact analytical model for asymmetric single-electron tunneling transistors

Inokawa, H., Takahashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 515 KB

english, 2003

23

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure

Sawada, K., Arai, T., Takahashi, T., Hara, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 390 KB

english, 2003

24

Hot-hole-induced dielectric breakdown in LDMOS transistors

Labate, L., Manzini, S., Roggero, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 413 KB

english, 2003

25

Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel

Ki-Duck Cho, Heung-Sik Tae, Sung-Il Chien

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 533 KB

english, 2003

26

The origins of leaky characteristics of Schottky diodes on p-GaN

Yu, L.S., Jia, L., Qiao, D., Lau, S.S., Li, J., Lin, J.Y., Jiang, H.X.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 370 KB

english, 2003

27

Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

Sghaier, N., Bluet, J.-M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 326 KB

english, 2003

28

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy/p-Si HBTs

Singh, D.V., Hoyt, J.L., Gibbons, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 720 KB

english, 2003

29

Impact-ionization-assisted intermediate band solar cell

Luque, A., Marti, A., Cuadra, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 521 KB

english, 2003

30

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors

Melvas, P., Stemme, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 683 KB

english, 2003

31

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process

Ming-Dou Ker, Kuo-Chun Hsu

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 608 KB

english, 2003

32

UV-responsive CCD image sensors with enhanced inorganic phosphor coatings

Franks, W.A.R., Kiik, M.J., Nathan, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 550 KB

english, 2003

33

Impurity profile effects of buffer layer on PT-IGBT characteristics

Chung-Hee Kim, Sang-Koo Chung

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 450 KB

english, 2003

34

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs

Meneghesso, G., Chini, A., Maretto, M., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 719 KB

english, 2003

35

Impact ionization measurements and modeling for power PHEMT

Baksht, T., Solodky, S., Leibovitch, M., Bunin, G., Shapira, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 628 KB

english, 2003

36

Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

Mitani, Y., Kasai, D., Horio, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 754 KB

english, 2003

37

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

Lallement, C., Sallese, J.-M., Bucher, M., Grabinski, W., Fazan, P.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 752 KB

english, 2003

38

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications

Kong-Beng Thei, Chung-Long Cheng, Hsin-Chien Lin, Tong-Sen Chang, Nun-Sian Tsai, Kuo-Hwa Lee, Hung-Ming Chuang, Sheng-Fu Tsai, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 548 KB

english, 2003

39

Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes

Palenskis, V., Matukas, J., Pralgauskaite, S., Simmons, J.G., Smetona, S., Sobiestianskas, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 525 KB

english, 2003

40

A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation

Winstead, B., Ravaioli, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 440 KB

english, 2003

41

Reduction of the dead region for edge on strip detector by a guard ring structure

Dejun Han, Chuanmin Wang, Guangfu Wang, Shuchen Du, Liyan Shen, Xiaona Tian, Xiurong Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 300 KB

english, 2003

42

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: its tradeoff with gate capacitance

Yang-Yu Fan, Qi Xiang, An, J., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 497 KB

english, 2003

43

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

Kuo, C.H., Chang, S.J., Su, Y.K., Wu, L.W., Chen, J.F., Sheu, J.K., Tsai, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 198 KB

english, 2003

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