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Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
Larcher, L., Verzellesi, G., Pavan, P., Lusky, E., Bloom, I., Eitan, B.Volume:
49
Year:
2002
Language:
english
Pages:
8
DOI:
10.1109/ted.2002.804726
File:
PDF, 654 KB
english, 2002