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Closed-form breakdown voltage model for PD SOI NMOS devices considering impact ionization of both parasitic BJT and surface MOS channel simultaneously
Shih-Chia Lin, Kuo, J.B.Volume:
49
Year:
2002
Language:
english
Pages:
8
DOI:
10.1109/ted.2002.804728
File:
PDF, 633 KB
english, 2002